矩阵论 方保镕 周继东 李医民 课本pdf
清华大学出版社 矩阵论 方保镕 周继东 李医民 课本pdf格式本当较系纯,全面地介绍了矩阵的基本理论、方法及其应用,其配书光盘包含全书客量习趣评解和拟考试自测试题解答提示本书在编写过程中。力求做到以下几点理论严谨。重点突出:既重视几何理论,又兼应用背景或異体应用结构合理,既有系统性,适合全面阅该(多学时)又具有可分性,便于逃读(少学时3取材丰露(活多种特殊矩阵与持运算选则,面海前沿。能反哄最看进展(如辛空问。辛变换)4深入浅出,文字流畅,读本书只需具番高等数学和线性代数的基本知识IsBN7-302-09208-79787302092087定价:39.00元《含光盘0151,2125D矩阵论Matrix Theory方保鎔周继东李医民编著Fang Baurmng Zhs Jidong Li Yimin北业老图014⑨清华大学出版社 Springer北京内容介本书比较全面、系统地介绍了矩阵的基本理论方法及其应用。仝书分上,下两篇,共1章,分别介绍线性空间与线性算子内积空间与等积变换,A矩阵与若尔当标准形,赋炮线性空间与矩阵范数,矩阵的微积分运算及其应用,广义逆矩阵及其应用,矩阵的分解矩阵的克罗内克积、阿达马积与反积,几类特殊矩阵(如:非角矩阵与正矩阵循环炬阵与素炬阵随机矩阵和双随机矩阵单调矩M矩阵与H矩阵、T矩阵与克尔矩阵等),辛空间与辛矩阵等内容。各章均配有一足数量的习题。附录中还给出了几套模拟自测试题。为了方便读者学习和参考本书备有一张光盘,其中包含各章习题详解和模孜考试自测试题的解答提示等供读者选用本书可作为理工科大学各专业研窕生的学位课程教材,也可怍为理王科和师范类院佼高年级本科生的选修课教材,并可供有美专业的敦师和工程技术人员参考版权所有剩印必究。举报电话:01062782989139011042913860310933书在版编自(QP)数据矩阵论/方保幣,周继东,李医民编著.北京:清华大学出版社,204.111SBN7-302092087矩…·Ⅲ.①方…鬧…③李…Ⅲ.矩阵一理论一高等学校一教材Ⅳ,Oλ51.21中国版本图书馆C数据核字(204)第082981号出版者:清华大学出版社址址:北京清华大学学研大厦http邮编:100084社总机:010-62770175害户服务:010-62776969组稿填辑:陈朝群文稿鶄辑;王海印装者:北京鑫海金溴胶印有限公司发行音:新华书店总店北京发行所开本::85×280印:25字数:532千字版次;2004年1]月第1雁2004年11月箱1次印刷书甘:lSBN7-302092087/0·389印:i~50c0定价:39.00元(含光盘本书如存文字不清漏印以及缺页倒页脱团等印装质量问题,请与清华人学出版社出版部联系调換。联系电话:(010)627701753:03或010)6279704FOREWORD前言随看科学技术的迅速发展古典的线性代数知识已不能满足现代科技的需要矩阵的理论和方法业已成为现代科技领域必不可少的工具。诸如数值分析,优化理论徵分方程概率统计,控制论,力学,电子学网络等学科领域郡与矩阵理论有着密切的联系,甚至在经济管理、金融,保险,社会科学等领域,矩阵理论和方法也有着十分重要的应用。当今电子计算机及计算技术的迅速发展为矩阵理论的应用开辟了更广的前景。因此,学习和掌握矩阵的基本理论和方法,对于工科研究生来说是必不可少的。目前,全国的工科院校已普遍把“矩阵论”作为研究生的必修课。为此,1989年我们根据国家教委制定的工科研究生学习矩降论”课程的基本要求编写了这本教材,并于1993年和19年由河海大学出版社正式出版,在部分高校讲授过多年。为使本书适应新世纪的要求,这次又对本书进行了充实更新,并对内容作了精心的处理。奉书内容分上,下篇,共10章,比较全面、系统地介绍了矩阵的基本理论方法及其应用。第1章与第2章重点介线性空间与线性算子、内积空间与等积变换等,这部分内容既是线性代数知识的推广和深化,又是矩阵几何理论的基础,熟练掌握和深氮理解它们对后面内容的学习乃至将来正确处理实际问题有很大的作用。第3章至第5章主要介绍A矩阵与若尔当标准形,赋范线性空间与矩阵范数矩阵的积分运算及其应用。这些内容是矩阵理论研究矩阵计算及应用中不可缺少的工具和手段。以上5盘内容均为191年国家教育委员会工科研究生数学课程教学指导小组对“矩阵论“课程所制定的基本要求,故本书把它们放A上篇约为2~3学分(讲授36-54学时)。考虑到矩阵理论的完整性,系统性,又能反映最新进展同时为满足某些专业多学时教学的需,本书的下篇安有:第6章介绍广义逆矩阵及其应用;第7章介绍矩阵的因子分解;第8章介绍几类特殊阵,请如非负矩阵与正矩阵素矩阵与循环矩阵随机矩阵和双随机阵单调矩阵M矩阵与H矩阵,T矩阵与汉克尔矩阵等:第9章介绍矩阵的克罗内克积阿达马积与反(Fan)积:第10章介绍辛空间与辛矩阵,这部分内容反映学科的前沿,有着广阔的应用前景,这在同类教材中是独有的。本书每章精迭了一定数量的习题。考虑到矩阵论课程的理论性强概念比较抽象,且有独特的思方式和解题技巧,有些读者在矩阵论做这些习题时可能会感到比较困难,为使这部分读者更好地掌握这门课程的教学内容,我们特意提共一张光盘,其屮包含夲B各章习题详解和模拟考试闩测试题解答等,供渎者选用,月录中带新号的内容用于选学或自学本引入新概念时既重视几何理论,乂兼颇廈用背景或具体应用;既有系统忖,适全血阅读(多学时),又具有可分性,便于选读(少学时);既注重取材得了(涵盖多种特殊矩阵殊运算法则),乂能够面向前沿,反映最新进展(如♀空间、辛变换)。木书的编非浅人深,阅读木书只需貝备高等数学和线性代数的基本知识作者诚挚地慼谢能麗教授他仔细审阅了全部书稿,并提出∫不少有益的议。参与本书第10章编写「仁的还有工如云教投同时要感谢冯康数授注道柳研究员对第10章编写工作的指导和帮助木书可作为理科大学各专业研究生约学位课程教材,过可作为理科和师范类院校高华级本科牛的选修课教材,并可供有关专业的教师和工程技术人员参考由于著者水平有限,书中如有不妥乃至谬误之处,祈望读者批评指正编著者CONTENTS目录前言即中南‘4h自中‘4b日B‘目·4··自D■血·第1章线性空间上的线性算子■■■■昌郾■4■■L■■■■■司昌■■4.1线性空间…1..1线性空间的定义及基本性质…………….1.2层、维数与坐标…………………1.1.3线性子空间丬题1.l……………“…………………"…………"………………………………212线性算子及其矩阵,警中■■自■曾q■PP………241.2.1线柱空间上的线性算子242问构算与线性空间同妳272.3线性算子的矩阵表示29i.2.4线性算子的运算31.2.5线性变换与方阵……142.6线性变换的特征值问题…421.2.7炎性变换的不变子空间■·■司L■■↓■4·晶日■■↓晶晶■昌■■1·』4_d54习题].2……………………………………………………56第2章内积空间上的等积变换…32内空间14日+日◆号P·F日中P唱号72.1.1内积与欧几里得空间『會■會■會冒■日鲁■7■百■自日P中■會2.1.2西空间介绍昌■■血晶■昌■■■■■■晶口日昌■p习题2.l……………………………………………………………742.2等积变换及其矩阼bt+rv吾T■"■■■2.2.1正交变换与正交矩阵2.2.2两类常用的正交变换及其矩阵………M>矩阵论2.2.3酉变换与酉矩阵介绍■■■v■■如v如4a■_■■■1■■『卜;卜+』■■■晶画■■日■1自自自自自.2.4正交投影变换与正交投影矩阵………"…96习题2.2…………………………………………………………………:1912.3埃尔米特变换及其矩阵……………■仙■■會■『山中…1103对称变换与埃尔米特变换………………1039.2埃尔米特正定、半正定矩阵…………106矩阵不等式1092.3.4埃尔米特矩阵特征值的性质1112.3.5一般的复正定矩阵………,……,1l42.3.6正规矩阵平昏尋晋忄【十■昏引■昏卜↓山↓4『昏十;山血b■■昏◆曲冒■■啬雪■■詈■『■血T■會■■■115习题2.3…,………………………………·…"………t……117第3章矩阵与若尔当标准形■日■P:日日日··..··卓a:c吗3.1λ矩阵…………………………"……………3.1.1A矩阵的概念………………3.1.2矩阵在相抵下的标准形…………………………1223.1,3不变因子与初等因子………………………………]243.2若尔当标准■品■量Pφ十4T■『■冒■■■n■……………1363.2.1数字矩阵化为相似的若尔当标准形……………………1363.2.2若尔当标准形的应用s147凯莱哈密赖定理与最小多项式149「题3……;…s""·55第4章赋范线性空间与矩阵范数4.1赋范线性空问…""F"t"t"!*…"………1584.1.1向量的范数………………………l584.1,2向量范数的性质…165习题4.1………………………………■■■昌↓·4+十P咱甲■■■■卓命·自如1674,2矩阵的范数…1+■h4b······■·日■···中··.日日日日4■■晶4·◆旮■T■■日中:1684.2.1矩阵洹数的定义与性质…………………………………1684.2.2算了范数■P申P■曾■■■■脚自自4.2,3谱范数的性质和谱半径且7习题■自■◆t自『自即↓■↓■11794,3摄动分析与矩阵的条件数…………8(目录4.3.1病态方程组与病态矩阵………………………184.3.2矩阵的条件数…I8I4.3.3矩阵特征值的提动分析……▲■■罪ψ●ψ如d4dd↓山喜血↓山t…185习题4.3■··中·平鲁即唱會申噜4■冒■曾自P宁■唱■曾■■■■■■■■■■自■曾自■■罪自咖q司血自日自·■■罪■聊■暴■b■看■■■第5章矩阵分析及其应用……………………………………………………1925.1向量序列和炬阵序列的极限………41925.1.L向量序列的极限………中·『■■■■■■■■唱食p"n■p■1925,1,2矩阵序列的极限…1945.2矩阵级数与矩阵函数………………1985.2.1矩阵级数……95.22矩阵函数中中曹号■量■俨■會■■■■自■自■曲自昌■口■206函数矩阵的微分和积分……………65.3.1阵数矩阵对实变量的导数1···日日■日早+4『P■-日.命4■4自中自啁日血聊217532函数矩阵特殊的导数……………………….2215.3.3矩阵的全做分22653,4函数矩阵的积分吾4■自四日日■自自自自自1日日日品+幽国日日4早·血■·即2285.4矩阵微分方程……"…""""""ss……2295.41常系数齐次线性微分方程组的解………………,295.4.2常系数非齐次线性微分方程组的解……3654.3n阶常系数微分方程的解………………………….239习题5a·PDI中日号日吾目.日品↓中◆自■■当血▲日日日“导吾t…"…"244下篇第6章广义逆矩阵及其应用………………………"…!………2516.1矩阵的几种广义逆6.1,1广义逆矩阵的基本概念25]6.1.2减号近A◆·■·■■■■b■b■即■■■··◆…………2526.1.3自反减号邀A上■鲁■血■自■■25G6.1.4最小范数广义逖Am6.1.5最小乘广义逆A1……■■·自…2656,1.6加号逆A257
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MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
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