MSC.Marc 2013.1理论手册
MSC.MARC是功能齐全的高级非线性有限元软件，具有极强的结构分析能力。可以处理各种线性和非线性结构分析包括：线性/非线性静力分析、模态分析、简谐响应分析、频谱分析、随机振动分析、动力响应分析、自动的静/动力接触、屈曲/失稳、失效和破坏分析等ContentsMarc Volume A: Theory and User InformationrefaceAbout this manual■■■■20Purpose of volume A20Contents of volume a20How to Use this manual211 The Marc SystemMarc Programs............■■23Marc for Analysis23Mentat or patran for gul24Structure of marc24Procedure Library24Material Library24Element Library25Program Function Library25Features and benefits of marc252 Program InitiationMarc Host Systems27Workspace Requirements27Marc Workspace Requirements27File Units30Program Initiation.........32Examples of running marc Jobs■■■■■344 Marc Volume A: Theory and User Information3 Data EntryInput Conventions38Input of List of Items39Examples of lists41Table Driven Input■■41Table Input42Parameters46Model Definition Options46History Definition Options46REZONE Option474 Introduction to mesh definitionDirect Input49Element Connectivity Data49Nodal coordinate data53Activate/Deactivate54User Subroutine Input54MESH2D54Block definition54Merging of Nodes54Block Types55Symmetry, Weighting, and Constraints57Additional Options58Mentat58FXORD Option59Major classes of the fXoRD Option59Recommendations on Use of the FXORD Option63Incremental mesh generators■■■■■63Bandwidth Optimization64Rezoning.....64Substructure65Technical Background66Scaling Element Stiffness67Contents 5BEAM SECT Parameter■■■68Orientation of the Section in Space68Definition of the section68Error Analysis74ocal AdaptivityNumber of Elements Created7474Boundary Conditions75Location of new nodes76Adaptive Criteria77Automatic Global remeshing80Remeshing criteria84Remeshing TechniquesPatran Tetrahedral mesher885 Structural Procedure LibraryLinear Analysis99Accuracy100Error estimates100Adaptive meshing101Fourier Analysis101Nonlinear Analysis104Geometric nonlinearities108Eulerian FormulationArbitrary Eulerian-Lagrangian(AEL) Formulation118Nonlinear Boundary Conditions118Buckling Analysis120Perturbation Analysis121Computational Procedures for Elastic-Plastic Analysis126Creep138Viscoelasticity142Viscoplasticity143Fracture Mechanics144Linear fracture mechanics144Nonlinear fracture mechanics147Numerical Evaluation of the J-integral148Numerical Evaluation of the Energy Release Rate with the VCCT Method150Automatic Crack PropagationDynamic Fracture Methodology1626 Marc Volume A: Theory and User InformationDynamic crack Propagation..162Crack Initiation163Mesh Splitting165Mesh Splitting Along Edges or Faces165Mesh Cutting167Dynamics...168Modal(Eigenvalue) Analysis.168Harmonic Response172Spectrum Response75Transient Analysis179Inertia relief191Rigid Body Mode Evaluation.191Rigid-Plastic Flow195Steady State Analysis95Transient Analysis196Technical background..196Superplasticity197Soil Analysis199Technical formulation200Mechanical Wear.,,,,,,,,203Design Sensitivity Analysis........■■205Theoretical considerations207Design Optimization208Approximation of Response Functions Over the Design Space..209Improvement of the Approximation211The Optimization algorithmMarc User Interface for Sensitivity Analysis and Optimization212Define Initial State with Results from a Previous Analysis215Pre state215Model sections217Steady State Rolling Analysis219Kinematics219lnetⅰaE仟fect...221Rolling Contact221Steady state rolling with marc221ContentsStructural Zooming Analysis.222Element Types Supported223Uncoupled Thermal Stress Analysis223Cure-Thermal-Mechanically Coupled Analysis224Cure Kinetics225Cure Shrinkage Strain228References,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,2296 Nonstructural Procedure LibraryHeat Transfer234Thermal Contact235Convergence Controls235Steady state Analysis236Transient Analysisemperature Effects238Initial Conditions239Boundary Conditions239Surface Energy243Thermochemical Ablation and Surface Energy Balance244Mathematical Presentation244Mechanical Erosion251Mechanical Erosion by Other Actions251pyrolySis251Coking255Monitoring Thermal Degradation258Presentation of the Energy Equation260Ablation262Welding27Radiation278Conrad Gap292Channel293Output294Diffusion295Technical Background296Hydrodynamic Bearing300Technical Background3028 Marc Volume A: Theory and User InformationElectrostatic Analysis304Technical Background305Magnetostatic Analysis308Technical background..309Magnetodynamic Analysis∴∴320Technical Background322Piezoelectric Analysis325Technical Background326Strain Based Piezoelectric Coupling..328Acoustic Analysis328Rigid Cavity Acoustic Analysis328Technical Background329Fluid mechanics330Finite element formulation333Penalty Method335Steady State Analysis336Transient Analysis336Solid Analysis336Solution of Coupled Problems in Fluids..336Degrees of Freedom337Element Types.337Coupled Analyses∴..■量■画■■■,,,,,,,,339Thermal Mechanically Coupled Analysis341Coupled Acoustic-Structural AnalysisFluid/Solid Interaction- Added Mass Approach342346Coupled Electrostatic-Structural Analysis348Coupled Magnetostatic-Structural Analysis350Coupled Thermal-Electrical Analysis (Joule Heating)352Coupled Electrical-Thermal-Mechanical Analysis355Coupled Magnetostatic-Thermal Analysis357Coupled Magnetodynamic-Thermal Analysis358Coupled Magnetodynamic-Thermal-Structural Analysis..359References∴,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,362Contents 97 Material LibraryLinear Elastic Material365Composite Material ......367Layered Materials368Classical Lamination Theory for Multi-Layered Shells371Material Preferred direction372Material Dependent Failure Criteria376Interlaminar Shear for Thick Shell, Beam, Solid shell, and 3-d Composite brick elements394Interlaminar Stresses for continuum composite elements397Progressive Composite Failure397Mixture model399Gasket403Constitutive model403Nonlinear Hypoelastic Material407Thermo-Mechanical Shape Memory Model422Transformation Induced deformation424Constitutive Theory425Phase Transformation strains425Experimental Data Fitting for Thermo-mechanical Shape Memory Alloy427Mechanical Shape Memory Model431Conversion from Thermo-Mechanical to Mechanical SMA oyExperimental Data Fitting for Mechanical Shape Memory alle434435Elastomer436Updated Lagrange formulation for nonlinear elasticity455Time-independent Inelastic Behavior456Yield Conditions458Mohr-Coulomb Material(Hydrostatic Stress Dependence)464Buyukozturk Criterion(Hydrostatic Stress Dependence)465Powder material465Obtaining Crush Curve and Shear Failure Parameters by Curve Fitting in Marc475Work or strain hardening.....,,,479Flow rule485Constitutive Relations486Time-independent Cyclic Plasticity489Time-dependent Inelastic Behavior492Creep(Maxwell Model)翻495Oak Ridge National Laboratory Laws50010 Marc Volume A: Theory and User InformationSwelling.501Viscoplasticity502Time-dependent Cyclic Plasticity502Anand solder model504Viscoelastic Material505Bergstrom-Boyce Model516Narayanaswamy Model518Frequency-dependent Material Behavior522Viscoelastic Material Behavior in the Frequency Domain522Thermo-Rheologically Simple Material Behavior in the Frequency Domain538Deformation Dependent Relaxation in the Frequency Domain539Harmonic Equations of motion541Performing viscoelastic Analysis in the Frequency Domain543Temperature Effects and Coefficient of Thermal Expansion,546Piecewise Linear Representation547Temperature-Dependent Creep548Coefficient of Thermal Expansion549Time-Temperature-Transformation549Low Tension Material552Uniaxial Cracking Data552LoW Tension Cracking552Tension Softening552Crack Closure553Crushing553Analysis554Soil model554Elastic Models554Cam-Clay Model555Evaluation of soil parameters for the critical state soil model557Damage Models565Ductile metals565Elastomers568Cohesive Zone Modeling570Nonstructural materials578Heat transfer analysis579Piezoelectric Analysis579Thermo-Electrical Analysis579Coupled Electrical-Thermal-Mechanical Analysis579Hydrodynamic Bearing AnalysisFluid/ Solid Interaction Analysis- Added Mass approach579.579
- 2020-12-04下载
- 积分：1
IP5209IP5109IP5207IP5108寄存器手册.pdf
英集芯移动电源芯片的IIC寄存器手册，不是数据手册。支持IP5209/IP5109/IP5207/IP5108等芯片，有详细的寄存器地址说明。英集匙利技INJOINIC TECHNOLOGYP5209/P5109/P5207/P51086、12C通讯波形介绍SDANOURMSBAcknowleAcknowledgementSignal From ReceiverSignal From Receiver8Condition(S)RW ACKACK Condition(Py1 2c master写的时候,先传8bit数据,第9个bit读save返回的ack,ack为低代表写入成功,为高代表写入不成功。l2 c master读的时候,最后一个byte传输是 slave返叵数据, master返回nack(高电平),代表读结束:如果 master返回的是ack(低电平),则说明读没有结束, master会继续读所以第九个bit的ack信号要看 master端是读操作还是写操作:因为IP5209/P5109/P5108/P5207只能做save如果往1P5209/P5109/P5108/P5207寄存器写入数据,P5209/P5109/P5108/P5207返回ack为低电平;如果从P5209/P5109/P5108/P5207读取数据,IP5209/|5109/P5108/P5207返回nack高电平),( master必须发NACK,否则会有异常)代表读结束(英集匙利技INJOINIC TECHNOLOGYP5209/P5109/P5207/P51083、寄存器功能描述标示为“ Reserved”的寄存器位有特殊控制作用,不可改变原有的值,否则会出现无法预期的结果。对寄存器的操作必须按照“读-→>修改-->写”来进行,只修改要用到的bit,不能修改其他未用bit的值。1.1 SYS CTLOOffset= Ox01Bit(s)NameDescriptionR/WReset7:5Reserved手电筒检测是否使能RW1. enableO: disableLight enableRW0: disable1 enableBoost enableRW1O: disable1: enableCharger enableRWO disable1: enable0Reserved1.2 SYS CTL1Offset=0x02Bit(sNameDescriptionResetReserved轻载关机使能(0c可设定轻载关机阙|R/W值1:使能| BATLOW轻载关机功能0:关闭 BATLOW轻载关机功能负载插入自动开机R/W1:使能0:关闭英集匙利技INJOINIC TECHNOLOGYP5209/P5109/P5207/P51081.3 SYS CTL2Offset =0x0cBit(s)NameDescriptionR/WReset7:3轻载关机电流阈值设定RW00100n * 12mA当BAT电流小于设定阈值时,持续325米机注意:此电流设定阈值需要大于100mA2:0Reserved1. 4 SYS CTL3Offset=0x03it (s)NameDescriptionR/WReset7:6长按按键时间选择010:1S01:2s10:3S11:4S1:连续两次短按(两次短按在15内)R1关札功能使能O:连续两次短按(两次短按在15内)关机功能关闭4:0Reserved1.5 SYS CTL4Offset =0x04Bit(s)NameDescriptionR/WReset7:6关机时间设定R/W11:64s10:3201:16s00:8sV|N拔出是否开启 BOOST11:开启0:不开启4:0Reserved(i)英集匙利技INJOINIC TECHNOLOGYP5209/P5109/P5207/P51081.6 SYS CTLSOffset = 0x07Bit(s)NameDescriptionR/WResetReservedNNTC功能使能R/W:使能1:关闭ReservedR/W按键开关WLED于电筒方式选择:0:长按251:短按两次按键0按键关机方式选择:R/W0:短按两次按键1:长按251.7 Charger_ CTIOffset=0x22Bit(s)NameDescriptionR/WReset7:5Reserved3:2充电欠压环设定(充电时输出端voUT的R/电压)11:4.83V10:4.73V01:4.63V00:4.53V注:在充电的时候C会检测输出voUT的电压来自动调整充电电流,当VOUT的电压大于改置值时就以最大电流对充电充电,小于设定值时就自动减小充电电流以维持此电压;如果客户要求边充边放状态下可在输出端加采样电阻检测边充边放状态输出端的负载电流大于100mA时可把欠压环设置为最高,优先对外部负载充电1:0Reserved英集匙利技INJOINIC TECHNOLOGYP5209/P5109/P5207/P51081.8 Charger CTL2Offset=0x24Bit(s)NameDescriptionR/WResetReserved6:5BAT电池类型选择R/W0011: RESERVED10:4.35V电池01:43V电池00:4.2V电池4:3RESERVED2:1恒压充电电压加压设置1011:加压4210:加压28mV1:加压1400:不加压注:4.30V/4.35V建议加压14mV;4.2V建议加压28mV;如果客户需要支持44V的电芯,可以在435V电池的基础上选择加压48mV,充饱由MCU检测到电池电压大于44V,电流小于200MA才认为是电芯充饱了Reserved1.9 CHG DIG cTL4Offset = 0x26Bit(s)NameDescriptionR/WResetReserved电池类型内部寄存器设定还是外部setP|设定|RW选择1:外部 VSET PIN设置内部寄存器设置如果是该bit为0,可通过0x24寄存器的bit6:5来设定电池类型5:0Reserved英集匙利技INJOINIC TECHNOLOGYP5209/P5109/P5207/P51081.10 CHG DIG CTL4Offset=0x25Bit(s)NameDescriptionR/WReset7:5Reserved充电电流设置(设置为电氾端电流)R/W10111lbat=b0*0.1+b1*0.2+b2*0.4+b3*08+b4*1.6A注:默认值为1011123A左右1.11 MEP CTLOOffset = 0x51it (s)NameDescriptionR/WReset7:6Reserved5: 4 LIGHT selLGHT功能选择R/W0000: WLED01: GP10210: VREF11: Reserved3: 2 L4_selL4的功能选择R/W00:L401:GP|o110: Reserved11: Reserved1:0L3_seL3的功能选择R/W01: GPIO010: Reserved11: Reserved1.12 MFP CTL1Offset=0x52sit(s)NameDescriptionR/WReset7:4ReservedR/W3: 2 VSET selVSET功能选择W0000:电池电压选择PN)英集应利P5209/P5109/P5207/P510801: GP10410: Reserved11: Reserved1: 0 RSET seRS氏T功能选择R/W0000:电池内阻选择PN01:GP|O310: Reserved11: Reserved1.13 GPIO CTL2Offset =0x53 default oxoBit(sNameDescriptionR/WReset7:5Reserved4:0 GPIO_ INEN GPIO[4: 0]input enableRW00: Disable1: Enable1.14 GP0 CTL2Offset= Ox54 default oxoBits)NameDescriptionR/WReset7:5Reserved4: 0 GPIO_OUTEN GPIO[4: ]output enableRW00: Disable1: Enable在丌启 Output之前,需要先将data配好1.15 GPO CTL3Offset =0x55Bit(s)NameDescriptionR/w Reset7:5Reserved4:0 GPIO DATGPIO[4: 0]DATAR/W0(i)英集匙利技INJOINIC TECHNOLOGYP5209/P5109/P5207/P51082.1 BATVADC DATOOffset =Oxa2Bit(s)NameDescriptionR/WReset7:0 BATVADO7:| BATVADC数据的低8bitRO2.2 BATVADC DAT1Offset Oxa3Bit(s)NameDescriptionR/VReset7:6Reserved5:0 BATVADC[13: BATVADC数据的高6btR8]VBAT=BATVADC*0. 26855mv+2.6VBATVADC VALUE low =l2C Read Byte( 12C SLAVE ADDR, Oxa2);//low 8bitBATVADC VALUE high=12c Read Byte(I2C SLAVE ADDR, Oxa3); //high 6bitf( BATVADC VALUE high&0x20)=0x20)//补码BATVOL[=2600-("BATVADC VALUE low +((BATVADC vaLUe high & 0x1F)*256+1)*0.26855else//原码BATVOL[]=2600+(BATVADC VALUE low+BATVADC_ VALUE high *256)*0.26855; //mv 24i
- 2020-12-11下载
- 积分：1
|
联系客服（QQ：3324461878）
