使用CC2591作为CC2530的功放
使用CC2591作为CC2530的功放, CC2591 PAThe absolute maximum ratings and operating conditions listed in the CC2530 datasheet [1]and the CC2591 datasheet [4] must be followed at all times. Stress exceeding one or more ofthese limiting values may cause permanent damage to any of the devicesNote that these characteristics are only valid when using the recommended register settingspresented in Section 4.6 and in Chapter 8, and the CC2530 - EM reference designOperating Frequency240524835MHzOperating Supply Voltage2036VOperating Temperature-40CTC=25C, VDD=3.0V, f=2440 MHz if nothing else is stated. All parameters are measuredon the CC2530-Cc2591EM reference design [11] with a 50 Q2 loadReceive CurrentWait for sync, -90 dBm input levelWait for sync, -50 dBm input level24mATXPOWER OXE5166mATXPOWER OXD5149mATXPOWER OXC5138mATXPOWER OXB5127mATransmit currentTXPOWER OXA5115ATXPOWER = 0X95100mATXPOWER = 0X8594ATXPOWE=0×75mATXPOWE=0×6579APower Down Current PM2UAISTRUMENTSPage 3 of 19SWRA308ATC=25C, Vdd=3.0V, f= 2440 MHz if nothing else is stated. All parameters are measuredon the CC2530-CC2591 EM reference design with a 50 Q2 loadReceive Sensitivity HGM 1 %PER, IEEE 802. 15.4[6] requires -85 dBm-988dBmReceive Sensitivity LGM1 PER, IEEE 802. 15.4 [6] requires -85 dBm-90.4dBmSaturationlEEE 802.15. 4 [6] requires-20 dBm10dBmWanted signal 3 db above the sensitivity levelIEEE 802.15.4 modulated interferer at ieee 802.15.4 channelsInterferer Rejection+5 MHz from wanted signal, IEEE 802. 15. 4 [6] requires 0 dBdB+10 MHz from wanted signal, IEEE 802. 15. 4 [6] requires 30 dB49dB+20 MHz from wanted signal wanted signal at- 82d BmdBdue to in the external lna and the offset in cc2530 the rssi readouts from cc2530CC2591 is different from rssi offset values for a standalone cc2530 design the offsetvalues are shown in table 4.4High Gain Mode79LoW Gain mode67Real rssi Register value-Rssl offsetISTRUMENTSPage 4 of 19SWRA308ATc=25C, Vdd=3.0V, f=2440 MHz if nothing else is stated All parameters are measuredon the CC2530-CC2591 EM reference design with a 50 Q2 load Radiated measurements aredone with the kit antennaRadiated Emissionwith TXPOWer Oxe5Conducted 2. RF (FCC restricted band)-462|dBmConducted 3. RF(FCC restricted band46.5 dBmComplies withFCC 15.247. SeeChapter 7 for moredetails about regulatoryRadiated 2.RF(FCC restricted band)42.2dBmrequirements andcomplianceIEEE 802.15.4[6]requires max.35%%Measured as defined by IEEE 802.15. 4 6TXPOWER OxE5. f= EEE 802.15. 4 channels13TXPOWER= OXD5. f= EEE 802.15.4 channelsTXPOWER= OXC5 f= EEE 802.15.4 channelsMax error∨ ectorTXPOWER OxB5 f= IEEE 802.15. 4 channelsMagnitude(EVM)TXPOWER OxA5. f= IEEE 802.15.4 channelsTXPOWER 0X95. f= IEEE 802. 15.4 channels643333%%%%%%%TXPOWER= 0x85. f= iEEE 802. 15.4 channelsTXPOWER =0x75 f= IEEE 802. 15.4 channels%TXPOWER= 065. f= iEEE 802. 15.4 channelsThe RF output power of the CC2530- CC2591 EM is controlled by the 7-bit value in theCC2530 TXPOWER register. Table 4.6 shows the typical output power and currentconsumption for the recommended power settings The results are given for Tc= 25 C, Vdd3.0V and f= 2440 MHz, and are measured on the cC2530-CC2591 EM reference designwith a 50 Q2 load. For recommendations for the remaining CC2530 registers, see Chapter 8 oruse the settings given by SmartRF StudioOXE520166OxD519149OxC18138OxB517127OxA5161150x95141000x8513940X75860x651079Note that the recommended power settings given in Table 4.6 are a subset of all the possibleTXPOWER register settings. However, using other settings than those recommended mightINSTRUMENTSPage 5 of 19SWRA308Aresult in suboptimal performance in areas like current consumption, EVM, and spuriousemissionTc=25C, Vdd=3.0V, f=2440 MHz if nothing else is stated All parameters are measuredon the CC2530-CC2591EM reference design with a 50 32 load2221-2V201918171611121314151617181920212223242526251510OxE5OxC5OxA50X850x65540-30-20-1001020304050607080ISTRUMENTSPage 6 of 19SWRA308A98Avg 3.6VAva 3vAvg 2V110111213141516171819202122232425261023.6V-1062V-110-40-30-20-100102030405060708070604020-Wanted signal at:-82 dBm10ISTRUMENTSPage 7 of 19SWRA308ACC2530-CC2591EM High Gain ModeC C2530-CC2591EM Low Gain Mode- CC2530EM40000-100110100908070-60-50-40-30-20-100The IEEE standard 802.15. 4 [8] requires the transmitted spectral power to be less than thelimits specified in table 4.7If-fc>3.5 MHz-20 dB-30 dBmThe results below are given for Tc=25 C, Vdd=3.0V and f= 2440 MHz, and are measuredon the CC2530-CC259 1EM reference design with a 50 Q loadIEEE absoluteChannel 182432.52435243752442524452447.5ISTRUMENTSPage 8 of 19SWRA308AOnly a few external components are required for the CC2530-CC2591 reference design. Atypical application circuit is shown below in Figure 5.1. Note that the application circuit figuredoes not show how the board layout should be done. The board layout will greatly influencethe RF performance of the CC2530-CC2591EM. TI provides a compact CC2530CC2591 EM reference design that it is highly recommended to follow. The layout, stack-upand schematic for the CC2591 need to be copied exactly to obtain good performance. Notethat the reference design also includes bill of materials with manufacturers and part numbersL102 L10=TI INF inductorVDD13cc2530LA 1RF PANTCC2591 RF NFNPA EN(P1 1)i工工I NA FNP:1HGM ENPO 7)T:1Proper power supply decoupling must be used for optimum performance. In Figure 5.1, onlythe decoupling components for the CC2591 are shown. This is because, in addition todecoupling, the parallel capacitors C11, C101, and C131 together with, L101, L102, TL11TL101 and TL131 also work as RF loads. These therefore ensure the optimal performancefrom the CC2591. C161 decouples the AvDD blAs power.The placement and size of the decoupling components, the power supply filtering and thePCB transmission lines are very important to achieve the best performance Details about theimportance of copying the CC2530-CC2591EM reference design exactly and potentialconsequences of changes are explained in chapter 6The RF input/output of CC2530 is high impedance and differential. The CC2591 includes abalun and a matching network in addition to the PA, LNa and RF switches which makes theinterface to the CC2530 seamless. Only a few components between the CC2530 andCC2591 necessary for RF matching For situation with extreme mismatch(VSWR 6: 1 till 12: 1out-of-band as shown in Figure 6.2) it is recommended to include all the components asshown in Figure 5.1ISTRUMENTSPage 9 of 19SWRA308ANote that the PCB transmission lines that connect the two devices also are part of the RFmatching. It is therefore important to copy the distance between the devices, the transmissionlines and the stack-up of the PCB according to the reference design to ensure optimumperformanceThe network between the CC2591 and the antenna(L111, C112, C111 C113 and L112matches the CC2591 to a 50 2 load and provides filtering to pass regulatory demands. C111also works as a dc-blockR151 is a bias resistor the bias resistor is used to set an accurate bias current for internaluse in the cc2591The TI reference design contains two antenna options. As default, the Sma connector isconnected to the output of CC2591 through a 0 Q2 resistor. This resistor can be soldered offand rotated 90 clockwise in order to connect to the PCB antenna, which is a planar invertedF antenna(PIFA). Note that all testing and characterization has been done using the SMAconnector. The PCB antenna has only been functionally tested by establishing a link betweentwo EMs. Please refer to the antenna selection guide [6] and the Inverted F antenna designnote [7 for further details on the antenna solutionsISTRUMENTSPage 10 of 19SWRA308A
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电子噪声与低噪声设计
本书致力于利用随机噪声理论分析和解释电子系统中噪声的产生和传播问题，介绍各种噪声源相关的机制和模型，说明不同噪声的特性和传播方式，以及线性电路中的噪声分析方法和噪声特性测量方法，并详细介。。。内容简介电子噪声包括内部固有噪声和外部干扰噪声。电子噪声是影响检测系统性能的主要因素之一。在通信系统中,噪声可能导致信息传输错误本书致力于利用随机噪声理论分析和解释电子系统中噪声的产生和传播冋题,介绍各种噪声源相关的机制和模型,说明不同噪声的特性和传播方式,以及线性电路中的噪声分析方法和噪声特性测量方法,并详细介绍各种不同噪声的抑制方法,给出大量实例,总结出低噪声设计的规则和要点。木书可用作电子工程、自动化、测试技术与仪器等专业的本科生或研究生教材,也可供涉及电子噪声和电磁兼容性的工程技术人员参考。本书封面贴有清华大学出版社防伪标签,无标签者不得销售版权所有,侵权必究。侵权举报电话:010-6278298913701121933图书在版编目(CIP)数据电子噪声与低噪声设计/高晋占编著.一北京:清华大学出版社,2016ISBN978-7302-43559-4I.①电…Ⅱ.①高…Ⅲ.①电子系统一噪声②电子系统一低噪声一设计ⅣN.①TN911.4②TN722.3中国版本图书馆CIP数据核字(2016)第081960号责任编辑:王一玲封面设计:常雪影责任校对:梁毅责任印制:沈露出版发行:清华大学出版社pogtlt:http://www.tup.com.cn,http://www.wqbook.com地址:北京清华大学学研大厦A座邮编:100084社总机:010-62770175邮购:010-62786544投稿与读者服务:010-62776969,c-service(@tup.tsinghua.edu.cn质量反馈:010-62772015, zhiliang tup. tsinghua.edu.cn印装者:清华大学印刷厂经销:全国新华书店开本:185mm×260mm印张:21字数:522千字版次:2016年6月第1版印次:2016年6月第1次印刷印数:1~1500定价:59.00元产品编号:06269401在电子电路和系统中,噪声是个重要问题。噪声污染有用信号,并使信号包含的信息增加了不确定性。电子噪声是影响检测系统性能的主要因素之一。在通信系统中,噪声可能导致信息传输错误。即使在噪声阈值较高的数字电路和计算机系统中,严重的噪声可能造成存储位的变化和程序运行混乱噪声包括内部固有噪声和外部干扰噪声。内部固有噪声是由载流子的随机运动引起的,有些固有噪声源可以通过在制造过程中提高加工质量加以控制,但其中大多数是基础噪声,不取决于技术。而外部干扰噪声是由外部噪声源发岀,经过某种耦合渠道对电路污染的结果。这两种噪声具有不同原因,它们需要不同的处理方法,在多数书籍和文献中,这两种噪声都是分别对待的,外部干扰噪声通常是电磁兼容性(EMC)相关书籍的主题。但是,这两种噪声引起的问题是类似的,应该综合在一起考虑。在处理其中的一种噪声时,有理由必须把另一种噪声也考虑在内。例如,当处理弱信号的电路无法正常工作时,污染了有用信号的噪声是源自于该电路本身还是从外部拾取的,从用户的角度来看都是无关紧要的。在这两种情况下噪声都会掩盖信号,在最坏的情况下则不能恢复信息内容。因此,只努力抑制电路的固有噪声,但缺乏抵御干扰噪声的保护手段,电路的噪声特性就会大打折扣。另外,在设计屏蔽措施时,努力把干扰噪声降低到固有噪声幅度之下,往往没有多大意义。本书涵盖上述两种噪声,致力于分析和解释电子系统中各种噪声的来源和性质,介绍各种噪声源的机制和模型,说明不同噪声的特性和耦合方式,以及线性电路中的噪声分析方法和噪声特性测量方法,介绍各种噪声的抑制措施,给出低噪声设计的规则和方法。许多种噪声具有随机性,其描述方式和分析方法不同于确定性信号,不太容易理解,本书第1章首先介绍随机噪声的基本原理和特性,这是后续各章及延续阅读的理论基础。第2~5章致力于固有噪声,这种噪声取决于电子器件和电路设计。第2章介绍各种固有噪声源的特性和描述方法;第3章介绍各种噪声参数和噪声分析方法;第4章介绍电子系统中常见的电子器件的噪声源、噪声模型和噪声特性;第5章介绍常用的噪声性能测量方法。前言第6~8章致力于外部干扰噪声,这种噪声受设备的物理结构和电路布局的影响很大。第6章介绍各种干扰噪声源和干扰耦合途径,除电磁噪声外,还特别介绍机械原因或温度扰动引起的噪声;第7章介绍干扰噪声抑制方法,重点是屏蔽和接地;第8章介绍常见干扰噪声源的噪声产生机制和预防措施。第9章介绍低噪声电路设计的方法和技术,包括选择低噪声有源器件,确定电路组态和工作点,噪声匹配的实现等,特别分析了反馈对噪声性能的影响。本书可用作电子、通信、自动化、测试技术与仪器等专业的高年级本科生或研究生教材,也可供涉及电子噪声和电磁兼容性的工程技术人员参考。由于作者水平所限,书中难免存在缺点和错误,恳请广大读者批评指正高晋占2015年10月于清华园符号說明1.基本符号X电抗的通用符号,单位为Ω频率通用符号,单位为Hz导纳的通用符号,单位为Sfo中心频率,单位为Hz阻抗的通用符号,单位为Ω截止频率,单位为Hz角频率通用符号,单位为rad/s电流通用符号,单位为A2.线性系统符号距离或长度,单位为mA(t)幅度函数电压通用符号,单位为V)相位函数器件内部的等效电阻,单位为9G(a)幅频特性函数B系统频带宽度,单位为Hz相频特性函数B电纳的通用符号,单位为Sh(t)冲激响应函数C电容的通用符号,单位为FH(j)频率响应函数E数学期望运算子H()传递函数电导的通用符号,单位为SH(x1)离散传递函数电流的有效值,单位为A3.随机噪声符号平均直流电流,单位为A噪声电压L电感的通用符号,单位为H噪声电流互感的通用符号,单位为H噪声电压的均方值P功率的通用符号,单位为W噪声电流的均方值R电阻或等效电阻,单位为ΩE电路的输入电阻,单位为Ω噪声电压的有效值,En=√eR电路的输出电阻,单位为噪声电流的有效值,n=√R负载电阻,单位为Ω噪声电压的平方根谱密度,单位R信号源内阻,单位为Ω为V/√Hz电压的有效值,单位为V噪声电流的平方根谱密度,单位热力学温度(旧称绝对温度),单为A/√Hz位为K热噪声电压符号说明热噪声电流共射接法下集射极之间的微变电散弹噪声电压阻散弹噪声电流场效应管漏源之间的等效电阻1/f噪声电压导通电阻1/f噪声电流二极管,场效应管的漏极F噪声系数( noise factor)场效应管的栅极噪声因数( noise figure),单位为dBS场效应管的源极S信噪比二极管电流,漏极电流B等效噪声带宽共射接法下的基极电流△f窄带宽度共射接法下的集电极电流p(x)x的概率密度函数共射接法下的发射极电流x的均值共基接法下的电流放大倍数,a=x的方差△Ic/△Ix的标准差共射接法下的电流放大倍数,B=x的均方值△Ic/△IBC2(x)x的自协方差函数共射接法下的直流电流放大倍Cx(x)x的归一化自协方差函数数,B=Ic/IBCx(z)x和y的互协方差函数5.其他符号Cx(x)x和y的归一化互协方差函数电磁辐射速度,c=2.998×10m/sR2(r)x的自相关函数h普朗克( Planck)常数,h=6.62R2(x)x和y的互相关函数1034JsS(f)噪声的功率谱密度函数k玻耳兹曼( Boltzmann)常数,k=S2(f)噪声电压的功率谱密度函数1.38×1023J/K(f)噪声电流的功率谱密度函数电子电荷,q=1.602×10-°C2(f)x的功率谱密度函数波长,mS2(f)x和y的互功率谱密度函数介质的介电常数p(x)x的归一化自相关函数自由空间的介电常数,Eo=8.85×(x)x和y的归一化互相关函数10 pF/mmJ|雅可比( Jacobi)行列式对自由空间的相对介电常数,En=4.半导体器件参数符号基极介质的磁导率C集电极自由空间的磁导率,A0=4x发射极10Hm1=4x×10pH/mmfr晶体管的特征频率,即共射接法对自由空间的相对磁导率,=下电流放大倍数为1的频率,单/0位为Hz介质的电导g跨导铜的电导,=5.82×107S/m基区体电阻对铜的相对电导,01=a/0rb’e发射结的微变等效电阻CMRR共模抑制比第1章随机噪声基础1.1随机噪声概述…………1.1.1噪声定义与分类1111.1.2内部固有噪声和外部干扰噪声比较1.1.3噪声的影响1.2随机噪声的概率分析方法…3471.3随机噪声的统计特征…1.3.1均值、方差与均方值········,····,·,,··,,,,,,······,·······,·,,1.3.2相关函数与协方差函数…1.3.3功率谱密度函数151.4常见随机噪声171.4.1白噪声与有色噪声171.4.2窄带噪声………………………………………………………191.5随机噪声通过电路系统的响应…211.5.1随机噪声通过线性系统的响应……………………………211.5.2随机噪声通过非线性系统的响应24第2章电子系统中的固有噪声源……………………………………………………292.1热噪声302.1.1热噪声的起源…302.1.2热噪声的特性……………………302.2扩散噪声……………………………………352.3散弹噪声362.4量子噪声………………………………………………………………………………39Ⅵ目录2.5产生-复合噪声(G-R噪声)…………………………………………………………402.61/f噪声…422.7爆裂噪声……………………………………………………………………452.8雪崩噪声…第3章噪声参数与噪声分析503.1.功率和增益3.1.1功率的各种常用定义513.1.2资用功率和资用功率增益…3.1.3可交换功率和可交换功率增益553.2等效噪声带宽…563.3线性一端口的噪声参数……603.3.1等效噪声电阻…………………………………613.3.2等效噪声温度623.3.3其他噪声参数……633.4线性二端口的噪声模型与噪声参数653.4.1E-Ⅰ噪声模型及等效输入噪声电阻…………………3.4.2等效输入噪声温度………693.4.3工作噪声温度……………723.4.4噪声系数……733.4.5噪声测度………………………………………………………………813.5二端口噪声分析………833.5.1二端口的噪声模型变换…………………………………………………833.5.2等效噪声源相关时二端口的噪声分析…………84第4章电子器件噪声884.1电阻噪声………884.1.1电阻的噪声机制与噪声指标…………………………894.1.2低噪声电阻的选择4.2电容、电感和电池噪声934.3半导体二极管的噪声特性…………………………………………………………954.4双极型晶体管(BJT)的噪声特性……994.4.1BJT的结构、等效电路和噪声源………………………………………994.4.2BJT的噪声参数1024.4.3BJT噪声的频率分布……………………………………………………1044.5场效应管(FET)的噪声特性1075.1FET的结构与噪声源…………1074.5.2FET的噪声等效电路与噪声参数1104.6运算放大器的噪声特性………………………………………………………113目录4.6.1运算放大器的等效输入噪声模型………………………………1134.6.2运算放大器噪声性能计算1164.7传感器电路噪声分析………………………………………………………122第5章噪声性能测量1335.1噪声测量常用方法……1335.2噪声测量中的检波器和平均器………………………………………………………1365.3噪声功率和有效值的测量误差1404噪声功率谱密度测量………………………………………………………1425.5二端口等效输人噪声测量1465.6噪声系数测量…………………………………………………………………1475.7噪声温度测量……1545.8其他噪声性能的测量和计算………………………………………………1575.9噪声发生器160第6章干扰噪声1666.1外部噪声源………………………………………1676.1.1自然噪声源…1686.1.2电磁噪声源1706.1.3静电噪声源…1736.1.4非电起源的干扰噪声源………………………………………………1746.1.5干扰噪声的频谱分布1766.2干扰噪声耦合途径……………………………………………………………1776.2.1传导耦合…1796.2.2电场耦合………………………………………………………1836.2.3磁场耦合………1866.2.4电磁辐射耦合………1916.2.5耦合模式……………………………193第7章干扰噪声抑制方法…1967.1电磁屏蔽………………………………………………………………………1967.1.1场传播与波阻抗1977.1.2屏蔽层的吸收损耗……………………………………………………2007.1.3屏蔽层的反射损耗2027.1.4屏蔽层中的多次反射…………………………………………2067.1.5屏蔽效能分析与综合2087.1.6影响屏蔽效能的其他因素…………………………………2117.1.7屏蔽总结2147.2电缆屏蔽层接地216
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