Inside_NAND_Flash_Memories.pdf
Inside_NAND_Flash_Memories.pdfRino micheloni· Luca Crippa· Alessia marelliInside nand flashMemoriesSpringerRino micheloniLuca CrippaIntegrated Device TechnologyForward InsightsAgrate BrianzaNorth yorkItalCanadarino. micheloni@ieee. orgluca.crippa @ieee.orgAlessia marelliIntegrated Device Technologyagrate brianzaItalylessiamarelli@gmail.comISBN97890-481-9430-8e-ISBN97890-481-9431-5DOI10.1007/978-90-481-9431-5Springer Dordrecht Heidelberg London New YorkLibrary of Congress Control Number: 2010931597O Springer Science+Business Media B.V. 2010No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or byany means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without writtenbeing entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose ofpermission from the Publisher, with the exception of any material supplied specifically for the purpoCover design: eStudio Calamar SLPrinted on acid-free paperSpringerispartofSpringerScience+businessMedia(www.springer.com)PrefaceIn the last decade Flash cards became the most important digital storage supportIt is difficult to identify a single killer application(digital photography, MP3digital video, ...)or whether the success of this media support is due to itsusability in different applications. It is also difficult to state whether the recentlution in the infotainment area has been triggered by the availability of high-performance NAND Flash memories or if the extraordinary success of Flash cardsis a consequence of the establishment of new applicationsIn any case, independently of the cause-effect relationship linking new digitalapplications and Flash cards, to realize how NANd Flash memories entered in ourdaily life, it is sufficient to imagine as they would change our recent habits if theNAND memories disappeared suddenly. To take a picture it would be necessary tofind a film (as well as a traditional camera .), disks or even magnetic tapes wouldbe used to record a video or to listen a song, and a cellular phone would return tobe a simple mean of communication rather than a console for an extendedentertainmentThe development of nand Flash memories will not be set down on the mereevolution of these digital systems since a new killer application can trigger a furthersuccess for this memory support: the replacement of Hard Disk Drives(HDD)with Solid State Drives (SSD)The advantages of Ssd with respect to HDD are countless(higher read/writspeed, higher mechanical reliability, random access, silent operation, lower powerconsumption, lower weight, .. ) Nevertheless, the cost per gigabyte is stillsignificantly favorable to hDd and the success of ssd will depend only on theperformances that they will succeed in reachingThe present book, the fourth authored by rino micheloni and coworkers afterVLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and ErrorCorrection Codes for Non-volatile Memories, all published by Springer, tacklesall the main aspects related to NANd Flash memories, from the physicaltechnological, and circuit issues to their use in Flash cards and SsdsAfter an extended market overview(Chap. 1), Chap 2 has been conceived as aguide for the entire book, so that the reader can directly reach the heart of theproblems that interest himThe following chapters deepen physical and technological aspects. In particularChaps. 3 and 4 tackle technological and reliability issues of traditional FloatingGate NAND memories, respectively, while the state-of-the-art of charge trappingtechnologies is effectively summarized in Chap 5Ⅴ i PrefaceThe central part of the book is dedicated to circuit issues: logic( Chap. 6),sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12)Other basic topics related to circuit aspects are also analyzed, such as theimplementation of Double Data Rate interfaces( Chap. 7), while multilevel storage(2 bits per cell) is presented in Chap. 10Techniques adopted to increase memory reliability and yield are discussedin Chaps. 13 and 14, the former dealing with redundancy, the latter with ErrorCorrection Codes. The test flux used by nand memories manufactures is describedin Chap 15Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allowreaching the lower cost per gigabyte and that will conquer, in the next few years,the market of consumer applicationsThe last chapters are dedicated to the two most popular systems based onNAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationshipbetween Nand memories and system performances are highlightedFinally, Chap. 19 describes the effects of ionizing radiations on non-volatilememories, to understand whether NaNd memories can be safely used in spaceand military applicationsProf. Piero olivoDean of the Engineering FacultyUniversity of ferrara, ItalyAcknowledgementsAfter completing a project like a technical book, it is very hard to acknowledgeall the people who have contributed directly or indirectly with their work anddedicationFirst of all, we wish to thank all the authors of the contributed chaptersWe have to thank mark de Jongh for giving us the possibility of publishing thiswork and cindy zitter for her continuous supportLast but not least, we keep in mind all our present and past colleagues for theirsuggestions and fruitful discussionsRino. Luca and alessiaTable of contentsPrefaceAcknowledgementsvIII Market and applications for nand Flash memoriesGregory Wong2 NAND overview: from memory to systemsR. Micheloni, A Marelli and S. Commodaro3 Program and erase of Nand memory arrays55Cristoph Friederich4 Reliability issues of NAND Flash memoriesC. Zambelli. a. Chimenton and p. olivo5 Charge trap nand technologies115Alessandro grossi6 Control logic131A Marelli.R Micheloni andR. ravasio7 NAND DDR interface161Andrea silvagni8 Sensing circuits197L. Crippa and R. micheloni9 Parasitic effects and verify circuits235L. Crippa and R. michelonO MLC Storage261L Crippa and R Micheloni11 Charge pumps, voltage regulators and HV switchesR Micheloni and L Crippa
- 2020-12-08下载
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SIFT算法详解及应用(讲的很详细)
SIFT算法入门时看的一篇文章，SIFT算法详解及应用(讲的很详细)SIFT简介SIFTScale Invariant Feature Transform传统的特征提取方法成像匹配的核心问题是将同一目标在不同时间、不同分辨率、不同光照、不同位姿情况下所成的像相对应。传统的匹配算法往往是直接提取角点或边缘,对环境的适应能力较差,急需提出一种鲁棒性强、能够适应不同光照、不同位姿等情况下能够有效识别目标的方法。己0]/3/己7彐SIFT简介SIFTScale Invariant Feature TransformSIFT提出的目的和意义分1999年 British columbia大学大卫.劳伊( David g.Lowe)教授总结了现有的基于不变量技术的特征检测方法,并正式提出了一种基于尺度空间的、对图像缩放、旋转甚至仿射变换保持不变性的图像局部特征描述算子一SIFT(尺度不变特征变换),这种算法在2004年被加以完善己0]/3/己7SIFT简介SIFTScale Invariant Feature Transform将一幅图像映射(变换)为一个局部特征向量集;特征向量具有平移、缩放、旋转不变性,同时对光照变化、仿射及投影变换也有一定不变性。己0]/3/己7SIFT简介SIFTScale Invariant Feature TransformSIFT算法特点SIFT特征是图像的局部特征,其对旋转、尺度缩放、亮度变化保持不变性,对视角变化、仿射变换、噪声也保持一定程度的稳定性。独特性( Distinctiveness)好,信息量丰富,适用于在海量特征数据库中进行快速、准确的匹配。多量性,即使少数的几个物体也可以产生大量SIFT特征向量。经过优化的SIFT算法可满足一定的速度需求。可扩展性,可以很方便的与其他形式的特征向量进行联合。己0]/3/己7SIFT简介SIFTScale Invariant Feature TransformSIFT算法可以解决的问题目标的自身状态、场景所处的环境和成像器材的成像特性等因素影响图像配准/目标识别跟踪的性能。而SIFT算法在一定程度上可解决:目标的旋转、缩放、平移(RST)图像仿射/投影变换(视点 viewpoint)光照影响(111 amination)目标遮挡( occlusion)杂物场景(c1 utter)噪声己0]/3/己7SIFT算法实现细节SIFTScale Invariant Feature TransformSIFT算法实现步骤简述SIFT算法的实质可以归为在不同尺度空间上查找特征点(关键点)的问题。原图像特征点特征点目标的特检测描述征点集特征点匹匹配点矫配正目标图像特征点特征点目标的特检测描述征点集SIFT算法实现物体识别主要有三大工序,1、提取关键点;2、对关键点附加详细的信息(局部特征)也就是所谓的描述器;3、通过两方特征点(附带上特征向量的关键点)的两两比较找出相互匹配的若干对特征点,也就建立了景物间的对应关系。SIFT算法实现细节SIFTScale Invariant Feature TransformSIFT算法实现步骤关键点检测己。关键点描述彐·关键点匹配4·消除错配点己0]/3/己7关键点检测的相关概念SFTiant Feature Transfor1.哪些点是SIFT中要查找的关键点(特征点)?这些点是一些十分突出的点不会因光照条件的改变而消失,比如角点边缘点、暗区域的亮点以及亮区域的暗点,既然两幅图像中有相同的景物,那么使用某种方法分别提取各自的稳定点,这些点之间会有相互对应的匹配点。所谓关键点,就是在不同尺度空间的图像下检测出的具有方向信息的局部极值点。根据归纳,我们可以看出特征点具有的三个特征:尺度方向大小己0]/3/己7
- 2020-05-27下载
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