ArcGIS Engine 10 开发中文帮助
不可得的学习资料，详细介绍AE开发技术……esrChinaBEIJING内部文档,请勿外传刷定及修订记录版本完成日期编写/修订纪要编写者备注文档目录结林雪淋构刘宇完善控件介绍和空间数刘宇据库的介绍完善柵格数刘宇据介绍完善符号化刘宇介绍完善网络分刘宇析功能完善参考系刘宇的介绍完善儿何对刘宇象的介绍esrChinaBEIJING内部文档,请勿外传目录介绍和开发相关的知识三.使用控件创建第一个桌面应用程序四.空间数据库五.几何对象和空间参考六.矢量数据空间分析七.符号化八.栅格数据分析九.编辑十.地图输出十实战十二安装部署esrChinaBEIJING内部文档,请勿外传介绍软件架构ArcPadArcGIs标准测览器MobileEngineArcGISExplorerArclnfoPArcEditorOnline GisNetworkArcviewArcReaderArCGIS ServerArcImsArcsDE文件DBMS是在全面整合了与数据库、软件程、人Ⅰ智能、网络技术及其它多方面的计算机主流技术之后,成功地推出了代表最高技术水平的全系列产品是一个全面的,可伸缩的平台,为用户杓建一个完善的系统提供完整的解决方案的基本体系能够让用户在任何需要的地方部署功能和业务逻辑,无论是在桌面、服务器、还是在野外:桌面(桌面软件产品是用来编辑、设计、共享、管理和发布地理信息和概念。桌面可伸缩的产品结构,从,向上扩展到和。目前被公认为是功能最强大的产品。通过一系饥的可选的软件扩展模块,产品的能力还可以进一步得到扩展嵌入式(是一个完整的嵌入式组件库和工具包,开发者能用它创建一个新的、或扩展原有的可定制的桌面应用程序。使用开发者能将功能嵌入到已有的应用程序中,如基于工业标准的产品以及一些商业应用,也可以创建自定义的应用程序,为组织机构中esrChinaBEIJING内部文档,请勿外传的众多用户提供功能。服务器(和用丁创建和管理基丁服务的应用程序在大型机构和互联网上众多用户之间共享地理信息是一个中心应用服务器,它包含一个可共享的软件对象库,能在企业和计算框架中建立服务器端的应用。是通过开放的协议发布地图、数据和元数据的可伸缩的网络地图服务器。是在各种关系型数据库管理系统中管理地理信息的高级空门数据服务器。栘动(支持的无线移动设备,越来越多地应用在野外数据采集和信息访问中。桌面和可以运行在使携式电脑或平板电脑上,用户可以在野外进行数据采集、分析和乃至制定决策。介绍是一组完备的并且打包的嵌入式组件库和工具斥,开发人员可用来创建新的或扩展已有的桌面应用程序。使用开发人员可以将功能嵌入刭已有的应用软件中,如自定义行业专用产品:或嵌入到业生产应用软件中,如和;还可以创建集中式自定义应用软件,并将其发送给机构内的多个用户由两个产品组成:构建软件所用的开发工具包以及使已完成的应用程序能够运行的可再发布的(运行时环境)。开发工具包是一个基于组件的软件开发产品,可用于构建自定义和制图应用软件。它并不是一个终端用户产品,而是软件开发人员的工具包,适于为或用户构建基础制图和综合动态应用软件是一个使终端用户软件能够运行的核心组件产品,并且将被安装在每一台运行应用程序的计算机上◆ Arcgis engine是基于COM技术的可嵌入的组件库和工具包, ArcGis engine可以帮助我们很轻松的构建自定义应用程序esrChinaBEIJING内部文档,请勿外传令使用 ArcGIS Engine,开发人员可以将(iS功能嵌入到已有的应用软件中,如自定义行业专用产品;或嵌入到业生产应用软仵中,如 Mirosoftf Word和 Excel;还可以创建集中式自定义应用软件,并将其发送给机构内的多个用户ArcGis Engine由两个产品组成:◇面向开发人员的软件开发包(ArcG| S Engine developer kit面向最终用户的运行时( ArcGIs Engine Runtime开发工具包是一个基于组件的软件开发产品,可用于构建自定义和制图应用软件。它并不是一个终端用户产品,而是软件开发人员的工具包,支持四种开发环境(十十,以及),适于为用户构建基础饲图和综合动态应用软件。是一个使终端用户软件能够运行的核心组件产品,并且将被安装在每一台运行应用程序的计算机上reGIS Engine的逻辑体系结构包含了 ArcGIS Engine中最核心的 ArcObjects组件,几乎所有的GS组件需要调用它们,如 Geometry| Extensions和 Display等DeveloperComponents包含了访问矢量或栅格数据的 GeoDatabase所有的接口和类组件。MapPresentationData包含了GiS应用程序用于数据显示、数据符号化、要素标注和专题图制作等需要的接凵和类组件AccessBaseServices包含了进行快速开发所需要的全部可视化控件,如和控件等,除了这些,该库还包括大量可以有调用的内置它们可以极大地简化二次开发工作。在图中我们可看出的开发体系是一条纵线,功能丰富,层次清晰。最上层的esrChinaBEIJING内部文档,请勿外传包含了许多高级开发功能,如、空间分析、维分析、网络分析、逻缉示意图以及数据与操作等。标准版并不包含这些许可,他们只能作为扩展存在,需要特定的才能运行。扩展模块3D三维分析Spatial空间分析Network网络分析Maplex智能标注Data Interoperability数据互操作Schematics逻辑示意图Tracking跟踪分析Geostatistical地理统计分析注意:运行时有多种版木级别,从标准版木一直到全业版木。标准的运行时提供所有应用程序的核心功能。这个级别的运行时可以操作几种不同的栅格和矢量格式、进行地图表达和创建以及通过执行各种空间或属性查询查找要素。这个级别的运行时还可以进行基本数据创建、编辑和简单的个人地理数据库(及分析但是如果遇到企业级数据库数据库的编辑以及复杂数捱模型的创建网络拓扑就需要运行时的标准许可相当于桌面级别的功能而许可相当于桌面级别的功能esrChinaBEIJING内部文档,请勿外传中的类库开发中,为了更好的管理这些对象,将这些对象放在不同的组件库中,而他们被物理的防盜目录下的中,而逻辑上被分散到不同的命名空间中下面我们详细对一些类库进行介绍库是新出来的一个类库,该类库包含了将独立应用程厅绑定到特定的系列产品的函数和方法该类库是在运行的应用程序的时侯库是架构中最底层的库。该库包含了暴露组成的其它库所使用的服务的组件。库中定义了许多接口,它们可以由开发者来实现。对象在中定义;所有开发者必须使用该对象在使用功能的应用程序中初始化和开发者不扩展该库,但可以通过实现其中的接口来扩展系统。库中包含了可在屮扩展的用户界面组件的接口定义,包括和接口。开发者使用这些接口来扩展组件。该库所包含的对象是对象,开发者可用于简化某些用户界面的开发。开发者不扩展该库,但可以通过实现其中的接口来扩展系统。库处理存储在特征类其它图形要素中的特征的或大多数用户交互的基本几何对象有。除了这些顶层的实体,还有作为和构建模块的几何体这些是组成几何体的基元它们是由形成一条的依次相连的组成包含两个不同的点,起点和终点,和一个定义从起点到终点的曲线的要素类型。这种有和所有的几何对象都可以有与它们顶点相关的、和esrChinaBEIJING内部文档,请勿外传基本的几何对象都支持几何操作,如和开发者不可以扩展几何基元。中的实体是指现实世界中的特征:这些现实世界中的特征的位置由具有空间参考的几何体來定义。投影和地理坐标系统的空间参考对象都包含在库中。开发者可以通过在空间参考间添加新的空间参考和投影来扩展空间参考系统库包含了用于数据显示的对象。除了负责实际图像输出的主要显示对象,该库屮还包含了表示颜色和符号的对象,这些颜色和符号用于控制显示上所绘制实体的属性。库中也包含了为用户在与显示交互时提供可视化反馈的对象。开发者大都通过类似于或对象提供的视图与显示交互。该库的所有部分都可以被扩展,常被扩展的有符号、颜色和显示反馈库被用于创建图形输出到设备,如打印杋、绘图仪和硬拷仄格式,如增强型图元文件和栅格影像格式、等。开发者使用该库和系统其它部分中的对象来创建图形输岀。通常这些是和厍中的对象。开发者可以扩展库用于定制的设备和输出格式。库提供了用于的编程是一个构建在标准工业关系和对象数据库技术基础上的地理数据储存库。库中的对象为攴持的所有数据源提供了统一的编稈模型。库定义了许多由架构中较高层次数据源提供者实现的接口。开发者可以扩展来支持特殊的数据对象等类型。此外,还可以使用对象添加自定义的矢量数据源。支持的数据类型不可以被扩展库包含用于基于文件数据源的的实现。这些基于文件的数据源包括N和开发者不能扩展库包含了用于数据库数据源的的实现。这些数据源包括软件支持的开发者不能扩展库
- 2021-05-06下载
- 积分：1
MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
- 2020-12-10下载
- 积分：1
