Lumped Elements for RF and Microwave Circuits (Bahl 2003)
Lumped Elements for RF and Microwave Circuits英文版，射频微波电路入门Lumped Elements for RFand microwave circuitsFor a listing of recent titles in the Artech House Microwave library,turn to the back of this bookLumped Elements for RFand microwave circuitsInder bahlArtech houseBoston londonwww.artechhouse.comLibrary of Congress Cataloging-in-Publication DataBahl, I.J.Lumped elements for RF and microwave circuits /Inder Bahlp cm.--(Artech House microwave libraryncludes bibliographical references and indexISBN 1-58053-309-4(alk. paper1. Lumped elements(Electronics) 2. Microwave integrated circuits. 3. Radiofrequency integrated circuits. 4. Passive components. I. Title. II. SeriesTK7874.54B342003621.38132-dc212003048102British Library Cataloguing in Publication DataBahl, I. J. Inder jit)Lumped elements for RF and microwave circuits.-(Artech House microwave library1. Radio circuits 2. Microwave circuits I. Title621.38412ISBN1-58053-3094Cover design by Igor Valdmar2003 ARTECH HOUSE, INC.685 Canton StreetNorwood Ma 02062All rights reserved Printed and bound in the United States of America. no part of this bookmay be reproduced or utilized in any form or by any means, electronic or mechanical, includingphotocopying, recording, or by any information storage and retrieval system, without permissionn writing from the publisherall terms mentioned in this book that are known to be trademarks or service marks have beenappropriately capitalized. Artech House cannot attest to the accuracy of this information. Useof a term in this book should not be regarded as affecting the validity of any trademark or servicemarkInternational Standard Book Number: 1-58053-309-4Library of Congress Catalog Card Number: 200304810210987654321To my adorable grandsons, Karan and Rohan Kaushal, with whom I play, cry,and laugh, and who have provided me with the idea and inspiration towrite this bookContentsPrefaceXVAcknowledgmentsXXIntroduction1.1 History of Lumped Elcements)Why Use Lumped Elements for rF andMicrowave circuits1.3 L, C, R Circuit Elements1.4 Basic Design of Lumped Elements4.1 Capacitor1.4.2 Inductor4.3 Resistorumped-Element Modelin1. 6 Fabrication1.7 ApplicationsReferencesInductors2.1 IntroductionLumped Elements for RF and Microwave Circuits2.2 Basic Definitions2.2.1 Inductance2.2.2 Magnetic Energy182.2.3 Mutual Inductance202. 2. 4 Effective Inductance202.2.5Imedang2.2.6 Time Constant2.2.7 Quality Factor222.2.8 Self-Resonant Frequency232.2.9aximum Current Ratin2.2.10 Maximum Power Rating2.2.11 Other Parameters232.3 Inductor Configurations242.4 Inductor models2. 4. 1 Analytical Models252.4.2 Coupled-Line Appiroach282.4.3 Mutual Induse arppi342.4.4 Numerical Approach362.4.5 Measurement-Based model382.5 Coupling Between Inductors452.5. 1 Low-Resistivity Substrates2.5.2 High-Resistivity Substrates462.6 Electrical Representations2.6. 1 Series and Parallel representations2.6.2 Network Representations51References52Printed Inductors573.1 Inductors on Si Substrate583.1.1 Conductor Loss3.1.2 Substrate Loss3. 1.3 Layout Considerations3.1.4 Inductor Model3. 1.5 Q-Enhancement Techniques3.1.6 Stacked-Coil Inductor803.1.7 Temperature Dependence84
- 2021-05-07下载
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上海大学计算机组成原理历年试卷
上海大学计算机组成原理历年试卷，文档形式，内部资料。[X]补=0010011Y]补=00.11001:[-Y]补=10011(7分,过程4分,结果3分)被除数商说明0010011000000被除数与除数同号+1100111+[Y]补I1101000000*0余数语除数异号,商上011101000000*00左移1位011001上次商0,+Y]补011010000*01余数与除数同号,商10011010000*010左移1位+1100111上次商1,+Y]补0000001000*011余数与除数同号,商1000001000*0110左移1位+11001上次商1,十[-Y]补110100100*010余数与除数异号,商0+0010010上次商0,+Y]补11010110*01100余数与除数异号,商01010110冰011000左移1位011001商末位置1结果:0.110012、已知替换算法LRU当前的信息块在登记表中的排序为0、1、2、3、4、5,画图依次表示出在先后使用3、1、4时登记表中信息块排序的变化过程(0)(组分别是3、3、4分)原始使用3使用1使用440原则:把最近使用的资快提到最前面,替换最下面的3、已知内存地址为0~1M单元 Cache地址为01k单元,设每块为256个单元,设计一组组相连 Cache组织。(1)给出数学描述和说明(10)(2)出简图(图中的 Cache块和内存块应标明具体地址)(10描述(10分)具体分两组组相连映像方式是以组为单位,组与组间是直接映像组内是全相连映像例如, cache为4块将 cache分为两组每组512字节,分为两块此时取k=0,1则第j块内存地址映射为j=(i mod 2)*2+kk=0, 1图10分第1页(共6页)上海大学2003~2004学年秋季学期试卷(A卷)课程名:计算机组成原理学分:4(闭卷学号:姓名:院、系:成绩题号四五六七得分得、填空:(每格2分,共20分)l、存储器总体上按照存储介质分为2、存储器接到读/写命令到完成读/写操作所需要时间称为。存储器进行两次连续读/写操作所需要的最小间隔时间称为3、半导体动态RAM靠存储信息。4、直接由计算机硬件执行的程序是5、组成一个32K×8的存储器当分别选用1K×4位、16K×1位、2K×8位的三种不同规格的存储芯片时,各需片。得分、简答题(每题5分,共35分)1、画图并说明32位浮点数的规格化表示,并举例说明其精度及数据范围2、只读存储器分为那几类,各自的功能3、画图表小静态存储器地址信号首先选通时Adr、CS、Dout的开关特性信号次序)。并简述为什么试卷纸第2页(共6页)4、简述为保持 Cache和主存一致性而定义的 Cache的两种写入方式5、简述动态存储器刷新的两种工作方式6、简述段式和页式虚拟存储器的特点7、读写存储器的分类,各自的特点得分三、综合题(45)设X=0.10011,Y=0.11001写出一种两位定点乘法和一种位定点除法的计算过程并给出计算结果(15)FCLLUFLT.TV-了k平小T一廿性XJ试卷纸第3页(共6页)2、已知替换算法LRU当前的信息块在登记表中的排序为0、1、2、3、4、5,画图依次表示出在先后使用3、1、4时登记表中信息块排序的变化过程(10)。命题纸使用说明:1、字迹必须端正,以黑色碳素墨水书写在框线内,文字与试卷纸第4页(共6页)3、已知内存地址为0-M单元, Cache地址为0~1k单元设每块为256个单元,设计一组组相连 Cache组织。(1)给出数学描述和说明(10)(2)画出简图(图中的 Cache块和内存块应标明具体地址)(10)命题纸使用说明:1、字迹必须端正,以黑色碳素墨水书写在框线內,文字与草稿纸第5页(共6页命题纸使用说明:1、字迹必须端正,以黑色碳素墨水书写在框线内,文字与草稿纸第6页(共6贝丿
- 2020-12-03下载
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