水声信号处理基础.pdf
水声信号处理基础内!提本书从统计糖点御述信她理的骞狸论。第一幸概述水产僧号处理的棋型及发展櫶況。第二、三章介绍信号分析、緞性系统和随机过程,是全书的基础部分。第四章到第六章紋迷信号统计处理的一般理论,包括最传线性滤、信号的统计检测和佔计理论初步。最后三章偏重于声纳十的信早处理间题一混喻干下的信号处理、相关接收阵和自适应处理技术。本书可作为水声工程专业有关信号处理户面的教材,或从事这方面研究工作的人员的参考书,也可作为雷,逍信专业在信号统计处题方面射参考书水声营号处理锅我璟陆根游轴萨“管B萨出新华带店北京魔行所发行各地新华书店楚督防工业出版社印倒厂印装78X10924/19张11/4403千字1981年9月第一叔981年9月第一孜印刷印敦:0,00一20肝篮→号15034-2175定价:180元前言木书是按教材的受求端写,以基袖知识和一般理论为主,但也惹虑了水的一些殊的要求。近十年来信号处理技术发展很快,理论上新月异,应用领域上不断扩大,通信、雷达,地震、控制,测量……都离不开信号处理。声纳往往在强干抗背景下工作,信号处飓技术的地位显得相当重耍。因此,这门课是水声工程专业重要主课之五十年代初期以维纳滤波为代表的最佳线性滤被得到迅速发展,五十年代后期,将统计决策理论应用到通信、控制中来,出现了信号检测理论,共十年代估计理论迅速发展,检测理论有点相形失色。卡曼滤波继承发展了维纳滤波,在估计理论中找到了自己的坚实理论基础。在过去教学中,曾一度突出了检测理论,现在看来不一定合。现我们仍旧把最生线性滤波列为专门的一章,但是加进了卡曼滤波的新内容。检测论也是专门的章,没有作更深入的分析,好在内已出版了这方面的专门著作。近来估计理论发展很快,内容很多,这本数材不可能全部包括进来。我们用了一章篇掘介绍估计理论初步,介绍了参量估计,也介绍了非参量佐计。为了学好最伟线性滤波,检测理论,估计理论,打好基础是必要的。尽管前面的课程已经学过信号分析和概率论,我们还是用了两章篇幅研究有规信号分析和随机信号分析,第一从教学角度来看适当重复是必要的;第二重复也不是简单的重复,而是向更深入方向发展,向离数的,多维的向发展,这种发展对后面分析是完全必要的混响干扰背景是水声信号处理的特殊问题,在第七章中作了专门的介绍,但是该章讨论的模糊度函数,信道的滤波器模型……对于水声以外的其他领域也是有用的。用基阵按收和发射信号也是声纳的特点,指关接收阵提高了被动声纳的性能,第八掌中对于这厅面闯题作了较详细的分析。承声信道复杂多变,加之,数字技术的发展,促使自适应技术应用到水声领域中,提高了声纳的性能,第九章中对自适应作了初步的介绍。在分析中要用到许多数学丁具,如积分方程,差分方程,矩阵……,我们认为不应回遍这些工具,但是在本教材中北不宜系统地全面地介绍这些工具,我们力图用一些简单易懂的例子使读者初步掌揸这些工具。木书申稿时,南京工学院水声工程教研组的黄建人、姚治国和周刚临三同志提出了许多宝贵意见,特表示感谢。由于我们的水平有限,错误一定很多,请读者批评指正。编者且录第一聋引论會會會曾會1伽會會身t會■血司■會自·自·會會5.}随机参量信号的检测…………1441.1基本的声纳系统的模型■面司唱■要85.4序列检测5612水声信号处理的发展概况………!习题會■山『■PP酽d普■■1■■b;b画4·4I§1.3主要符号表示………4第六章估计理论初步…………162第二章信号的解析表示和线性系统……5§6.16计的木慨念6§2.1,信号和信号分析……§6.2则叶斯估计……………,………l§2.2谱函数的性展…,…6.3递归线性最小方為佔计§2.线性系统■■q■■■口司■■司口6.4功率谱估计……§2.4釆样定理…………习题…………中“9s2.5离散线性系统4,35第七章混响干扰下的信号处理……202习题……………………………477,1模粉度效看1自中即■■:第三章随机过程…_q号看■唱■§7.2混疃的純计特…………………"235§3.1概率和随机变量9§P3混响于扰下的信号处理3.3随机变量的函数5了习§3.3期螺……第八章相关接收阵33,4随机过程6588.1引言…………225§3.5随机过程的功率…分8.2平方累积阵分析…晶中h2E5§36高斯随机过程■bd备A8§83乘积阵分析……………230习題………………………“…………7s8.4有板性处理的基阵公析………2?第四章最佳线性滤渡…………………y2§8.5最大信噪比滤欲阵的分忻…………2b4.1最佳线性滤波的标准………$_2习题………………………………24§4.2匹配滤戏器的分枥…93第九草岩适应处理技术…"245E43匹配滤波器的实现…………0惡9,1水声信道的滤波器模型84.4继纳滤波……………………19.2自适应概念和MS适应逐算…24684.5卡曼滤波初步……!59,3自遞应波束形成器……习恶…曾曾會P■224§9.4自逅应滤被…第五章信号的统计检测习题…………269§5.1惭述……………)6录有关的儿个矩阵公式n··"‘2§52高斯噪声背景下确知信号§1儿个有关的矩阵求逆公式…………*的检测+-+jFs2矩阵做分7第一章引论§1,1基本的声纳系统的模型声纳系统按用途来分有许多型号,但它的工作方式不外乎主动式和被动式两种,如图1-1-所声波故射体主动式声纳由发射机发射已舶信号,发射积目标通过换能器转换成声波信号,经月标反射后成回波,经过渐水中各式各样的散射⊥式/怀回效+散射回液(响体散射形成混响接收机不但接收到回波接收机和混响,而且还会接收到环境噪声,通常射哗产发声目标包括海洋噪声和本舰噪声。回波是信号境噪声信号其余都是干扰。在简单的检测模型中,回被动式波信号是完仝确知的,它和发射波形图1-1-1甚本的声纳系鸵模型样,只不过是时闻上平移了一下。但实际情况要复杂得多,于目标的运动,会引起多普泐( Doppler)频移,由于目标不是一个点,多径传揹,回波在时间轴上被犷展,波形和发射波形可態会大不相同,此外由于介质的随机性,也会造成回波信号的起伏。在主动声纳中,混响往往是主要的干扰。混响也是由发射信号产生的,它的许多方而的特件和阿波极为相似,使得抗混响相当闲难。本噪芦也是一种亚重的干扰:在本舰高速诺动时,更是如此。但是它是一个宽带信号,回波是一个窄带信号,可以利用功率谱的亲异来风分它们被动声纳是根据日标辐射的声液来检测目标的。这辐射的声波可能是目标上的声纳发射的声波,也可能是目标运动时辐射出的舰船噪声,也可能是目标引起的其它声音。目标辐射出的觑船噪声的功率漕和本舰噪声的功率都是宽带的,从功率谱上区分它们有一定的困难。但是本舰噪声和日标舰噪声在空间相关性上是不同的。可以利用空间相关性上的差异来区分它们。声纳系统的模型反映了声纳、介质和目标三者的关系。介质和目标的特性是我们无法控制的,而声纳,它的发射方式与接收方式是我们可以合理地选择的。使得它最佳地和介质、目标的特件匹配。早期的声纳系统,它的发射方式、接收方式是不变的,而介质和目标的特性却是因时、因地而异的,这就不可能实现最住地匹配。必须改变这种不变的发射方式、接牧方式,要根据当时当的介质、目标的特鉎,自动地调整发射方式、接收方式,以运到最住地匹配。这便是所谓的直适应技术。§1.2水声信号处理的发展概况市纳从它的诞生到现在有了很大的发展和变化。特别是近二十多年,更是如此。声纳的变化和水声信号处理的发展是一致的,或者说水声信号处理每出现一个新技术,都导致声纳的一次大变化。五十年代以前的声纳,发射波形是比较简单的,是一个正弦填充的方波,接收机采用窄带滤波。脉冲压缩我术的出现,导致脉冲压缩声纳逃出现,发射波形釆用线性调掘脉沖,戌者伪随机编码。在接收机中相应地出现了信号处理器(如 DELTIC系统等〕草题的声纳是利用换能器的自然方向性,用机械旋转的方法实现波束的旋转。随着换能器的越来越大、越来越笨重,机槭旋转越来越困难。利用相控阵孜术之后,可以用电的力法形成波束的旋转;还可以用电照方法同时形成多个波束,出现了多液束阵。利用信号有干扰的空间相关性的差别,将信号处理技术应用于基阵,出现了相关接收阵。由于铵收到的信号和干扰变化范围很大,给信号处埋带来困难,便出现了动态范压缩和归一化技术目前,自适应技术及各式各样的数字处理技术迣入了声纳领域。图1-2-1是目前的典型声纳发射机方框图。信号发生器的输出可具有多种形式(模拟的或数字的,正弦填充脉裨或线性调频脉冲,或几种信号同时共用),这取决了所考虑的系统的具体要求。信号发生器的犏出送到波束形成器矩阵去,波束形成器矩阵的用途是对信号进行适当的加权和延迟,以使发射阵产生所要求的声束图,将声能聚集到所要求的空间中去。程序器的用途是使多路或顺序发射同步。程序器信号束发生器形成矩臂发射阵图⊥-2-4声纳发射机户框图图1-2-2是目前的典型声纳接收机方框图。它比发射机复杂。这是由于在发射时信噪比是无限大的(或接近无限大),而在接收时,在大多数有实际意义的情况下,信噪比是小于1的。接收基阵和波束形成矩阵对应于发射机中发射基辉和波束形成矩阵。这两个基阵通常是共用的。但是波卓形成兔阵是有差别的,在发射机中,为了使发射能量最大,波東形成航阵具有最小的幅度加权。在接收机里,则使用幅度加权,抑制旁瓣或增大方向性指数。在发射机中用相控发射,在接收棚中采用自适应波束形成处理。程序器判决设舒一接收F态范信号形成矩阵和归处理器显示器昕觉指示网1-2-2声接收机了框图动态范围压缩和归一化(DRCN)与信号处理器具有共同的任务:对接收的信息进如工,以便适当地将其显示在视觉显示器或听党显示器上,或送给判决设备(可能是一个缴字计算机)。程序器是用来达到同步和自适应的。本课程的任务是介绍信号处理的基本理论及其实现方案。1.3主要符号表示x(t),f(t),g(:)等表示实信号x(扌)∫2(f),ga(t)等表示复数解析信号F()或ⅹ(的)表示实信号X(#)的频谱函数F(①)或X2(①)表示复数解析信号xa(4)的频函数Rx(℃)或R2x()或R(T)表示信号x(t)的自相关函数R2(τ)或R12(T)表示信号x(:)和y(t)的互相关函数H()表示时不变线性系统的频半响应函数h(T)表承时不变线性系统的冲激响应函数H(,t)表示时变线性系统的频率响应函数h(,T)表示时变线性系统的冲激响定函数xn}表示实信号序列Y(z)表示{x》}的z变换hn)表示线性系统刈单仕釆样序列("-k)的晌应h(n)表示线性位移不夾系统对单位采祥序列8(”)的响应正(z)裁示a(B)的之变换尸(A)表示事件A的粥率P(A.B)表不事牛丹出现条供下,惠件A出现的条件率F(a)或F(x)表示随机变量x的概率分布函数p()或P()表小陡机变量x的概率密度函数F()或F(x|y)表示条件概率分布函数Fx(妖}或F(K)衣爪随机向量X的慨率分布咝爨p()或户(x)表示随机向量X的概率密度区数px(夕(XY)表示随机向量的条件概率密度函数E〔x会具表示随机变量x的微学期望或统计平均E(x°)裘示随机变量x的n阶愿点矩E〔(x-μ)“)表示随机变量x的阶中心矩Mx(s)=Ee〕表示随机变量x的特征函数E(X)仝μx裴示数学期望或统计平均中x全FXX表示均方矩阵Vk≌EX-)(X-)2〕表示方差矩阵z(β)会E(XY-)或xy表条件均值vx()会E[(x-x)(X-x)Y=月或4y表示条件方差矩阵Mk(s)表示特征函数x(t,》或x(t)表示一维随机过程样本函数X(t,k或X(!)表示n雏随机过程样本函数EX(t,)!表示X(t,)的均值中x(t)表示X〔f,)的均方矩阵V2(t?表示X(t,k)方差矩阵φx(1,t:)表示X〔e)的相关矩阵vx(t1,f2)表示K(t,四)的协方差矩阵S(o)表示x(f:①)的功率谱第二章信号的解析表示和线性系统§2,1信号和信号分析信号信息传输系统的任务在于向接收者传輸消息。声纳是一种信息传输系统,它所传输的消息是目标的有无,日标的运动要素(距离、方向、形度……),目标的性质等。消息本身往往不便于传输,要將消忘放在某…个便于传输的物理量屮,这种带有消息的物理量叫做信号。在主动声纳中,回波的行无表示目标的有无,回波出现的方向,苌示目标的方向,回波出现的时刻反映了目标的距离,回波中多卜勒频偏反映了目标的相对速度,回波的频谱结构反映了目杯的类型。因此主动声纳中回波是信号。类似跑,日标的辐射噪声是被动声纳的信号。凡是妨碍接收者接收信号的物理量都是干扰。本翹噪声、混响、海洋噪声都是声纳的干扰。应当说明,干桄也带有消总,只不过是接收者不需要的消息。因此同一个勒理量对于这个接收者是信号,对于那一个接收者可能就是干扰。钶如编队航行时,甲觎主动声纳引起的日标回波是乙舰主动声纳的干扰,它会严重妨碍乙舰主动声纳的工作。再如对一个搜索潜艇的芦纳兵而言,本舰噪声是干扰,对一个测量本舰噪声的工作人员而言,本舰噪声是信号。由此可见,信号和干扰的差别仪仪在于接枚者是否需要。因此,研究信号的方法和工具,也适用于干扰。第二章、第三章介绍的内容既适用于信号也适用于干扰。信号的时域分析我们将信号用时间纟的函数表示,记作x(4)。如果时间连续地取值,信号叫做连续时间信号。如果时间f离散地取值,信号叫离散时间信号。在声纳系统中常见的信号有:1.脉冲信号矩形脉冲「A0≤f≤Tx(t)0其余的r它有两个参数A和TA称做脉御幅度,T称倣脉冲班度钟形脉冲x(t)=A·e(2-1-2)它也有两个叁数A和α:A称做脉冲幅虔。它是κ〔扌)的最大值。a反映了脉冲度。钟
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MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
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