MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
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电力电子应用技术的MATLAB仿真 林飞杜欣
pdf，学习现代电力电子技术搭仿真很好用的一本教材，适合初学者及有一定研究需求的人使用电力电子四用技市的林飞杜欣编著MATLAID真忄用电力出照www.cepp.com.gh内容提要为了满足电力电子专业及其相关领域人员对计算机仿真知识的需求,使其掌握当前先进的计算机仿真工具,特编写本书。本书首先介绍了 MATLAB软件及其图形仿真界面 Simulink的基础应用知识,详细介绍了用于电力电子仿真的 SimPowerSystems中的各模块库,然后列举了DC-DC变换、DC-AC变换、AC-DC变换、直流调速、父流调速等方面的应用。全书通过大量实例介绍了电力电子应用技术的仿真方法和技巧。本书适用于高等学校电力电子专业及其相关专业的教材,也可供相关专业的工程技术人员学习和参考图书在版编目(CP)数据电力电子应用技术的 MATLAB仿真/林飞,杜欣编著.一北京:中国电力出版社,2008ISBN978-7-5083-7953-1I.电…Ⅱ.①林…②杜…Ⅲ.电力电子学-系统仿真-软件包, MATLABⅣ.TM1中国版本图书馆CIP数据核字(200)第153247号责任编辑:孙芳责任校对;王开云责任印制:郭华清书名:电力电子应用技术的 MATLAB仿真主编;林飞杜欣出版发行:中国电力出版社地址:北京市三里河路6号邮政编码:100044电话:(010)68362602传真:(010)68316497印刷:航远印刷有限公司开本尺寸:185mmx260mm印张:19字数:476千宇书号:ISBN978-7-5083-7953-1版次:209年1月北京第1版印次:2009年1月第1次印刷印数:0001-3000册定价:3200元敬告读者本书封面贴有防伪标签,加热后中心图案消失本书如有印装质量问题,我社发行部负退换版权专有翻印必究前言电力电子应用技术综合了微电子、电路、电机学、自动控制等多学科知识,是电能变换与控制的核心技术,在工业、能源、交通、国防等各个领域发挥着越来越重要的作用然而,由于电力电子器件所固的非线性特性,使得对电力电子电路及系统的分析十分困难。现代计算机仿真技术通过在计算机平台上模拟实际的物理系统,为电力电子电路及系统的分析提供了有效的方法,大大简化了电力电子和传动系统的分析与设计过程,成为相关专业学生和工程技术人员学习和研究电力电子应用技术的重要手段。计算机仿真需要用数学模型代替实际的电力电子装置,通过数值方法求解数学方程,获得电力电子电路及系统中各状态变量的运动规律。但是,复杂的数学建模、数值计算及编程过程仍然需要耗费巨大的工作量,阻碍了计算机仿真技术在工程中的应用为此,出现了 PSPICE、 SABER、 MATLAB等适用于电力电子电路及系统仿真的专用仿真软件。这些软件将各种功能子程序模块化,提供了完善的部件模型,用户只需简单的操作便可完成给定系统的仿真模型,成为广大学生和工程技术人员在学习、科研和开发过程中的必备丁具早期的 MATLAB软件主要用于数值计算及控制系统的仿真和分析,经过多年不断地扩展,目前涉及通信、信号处理、电气工程、人工智能等诸多领域,已经成为风靡全球的科学讣算软件。 MATLAB中提供的“ SimPowerSystems”,是进行电力电子系统仿真的理想工具与 PSPICE和 SABER等仿真软件进行器件级别的仿真分析不同, SimPowerSystems中的模型更加关注器件的外特性,易于与控制系统相连接。 SimPowerSystems模型库屮包含常用的电源模块、电力电子器件模块、电杋模型以及相应的驱动模玦、控制和测量模块,使用这些模块进行电力电子电路系统、电力系统、电力传动等的仿真,能够简化编程工作,以直观易用的图形方式对电气系统进行模型描述。本书正是基于该软件,向读者详细介绍电力电子应用技术的仿真方法和技巧本书可以分为两大部分:前三章属于基础知识部分,介绍了 MATLAB、 Simulink及SimPowerSystems的基木使用方法;后六章属于应用部分,分别从DCDC、DCAC、ACDC直流调速、交流调速及其他应用等六个方面介绍了相关的基础理论及仿息方法。本书力求浅显易懂,通过实例介绍仿真软件的使用方法,引导读者灵活应用书中的知识,从而进步实现自己的应用目标本书体现了如下特点:(1)内容新颖,结合目前最新版本的 MATLAB R2008a进行介绍(2)编排合理,筒单介绍电力电子应用技术的基础理论,并在此基础上详细描述了仿真模型的建立、设置、运行及分析过程。(3)通过大量实例使读者易于掌握仿真软件的使用方法本书编写过程中,林飞、杜欣确定了本书的编写大纲。第1、2、6、7章由杜欣、黄少芳撰写;第3、4章由冉旺、林飞撰写;第5、8、9章由林飞揆写。林飞负责全书的统校和审定工作。感谢研究生马亮、赵坤、盛彩飞、黄泳均、李明娟等同学,为本书提供了相关的仿真实例。编写过程中,本书参阅了许多国内外论文、论著,主要的都已列举于参考文献部分,在此向所有作者们表示深深的谢意!北京交通大学电气工程学院暨电力电子研究所为本书的出版给予了极大的支持,作者的家人、朋友和同事都以不同的方式为本书的出版给予了关怀与帮助,在此一并表示感谢!由于本书涉及范围广,作者学识有限,加之时间仓促,难免会有疏漏或不当之处,恳请读者批评指正编者2008年8月于北京交通大学目解录前吉第1章 MATLAB基础知识11 MATLAB简介……12 MATLAB环境………………213 MATLAB基本应用…1.31数据结构1.32数值运算1413.3程序设计基砷……………17134 MATLAB的基本绘图21第2章 Simulink环境和模型库…2521系统仿真( Simulink)环境………………………………………………2521.1 Simulink工作环境…………导要………25212 Simulink的基本操作29213创建 Simulink仿真模型……322.1.4创建 Simulink仿真模型的子系统……………………3922认识 Simulink的重要模块库23S-函数的设计方法◆中中·卧。省●52第3章 SimpowerSystems模型库……………………593. 1 SimPowerSystems模型厍概述5931.1 SimPowerSystems模型库简介……312 SimPowerSystems模型库内容………6032电源库a.曲自血A自品品自B看品自自省曲会·DD68321直流电压源………68322交流电压源……68323三相可编程电压源曲看。甲甲鲁即■P●。·群甲甲一一33元器件厍3.31断路器…703.3.2串联RIC支路…看D■自1萝看p山71333变压器………7334电机库…7535电力电子库3.5.1绝缘栅双极型品体管…………79352二极管80353通用桥式电路8136应用库37其他模块库3.71控制模块………833.72测量模块……………………8638图形用户界面…86381调用方法…………………8638.2属性参数对话框…383 Steady State Voltages and Currents窗口…88384 Initial States Setting窗口89385 Load Flow and machine initialization窗口●口q●看中D甲看甲要·鲁要导●38.6 Link to the lti viewer窗口…pD●看●罪香■44命甲甲甲p即命●■命自杳命命自■……90387 Impedance vs. Frequency Measurement窗口…38.8快速傅里叶分析工具窗口…··甲··副帝·新看·耳自389磁滞设置工具窗口鲁Dp,鲁d●看罪中甲d中中垂命卡备…9239应用举例……………93第4章DC-DC电路的仿真……………………………94.1降压(Buck)变换器…4,2升压( Boost)变换器………鲁鲁寸聊,年■即甲卧命申4■中■■10643升降压(Buck- Boost)变换器11444丘克(Cuk)变换器c看翻曾普晋4曹曾自看动11945带隔离变压器的DCDC变换器………………………12241单端正激变换器( Forward Converter)……………………………………123452单端反激变换器( Flyback Converter)…124第5章DC-AC电路的仿真====12951方波逆变电路…………………………………………12951单相方波逆变电路1295112三相方波逆变电路……………13252单相PwM逆变电路…………着m·d音即自费目即自唱组省……………………………136521双极性SPwM……136522单极性SPWM…142523倍频SPWM53三相PwM逆变电路………………………………148531SPWM逆变电路直中●命吾即甲是中532死区时间的影响151533电流跟踪PwM自斯甲要即量p自日日qq自·d电………………154534空间矢量PWM…………………………15854多电平逆变电路……………162第6章AC-DC电路的彷真……1686.1电容滤波的不可控整流电路……咖卡自冒甲看■1非168611电容滤波的单相不可控整流电路1686.12电容滤波的三相不可控整流电路如l萨m罪62单相有源功率因数校正电路仿真……………………………………18063桥式相控整流电路……187631单相桥式全控整流电路……18763.2三相桥式全控整流电路64PWM整流电路200第7章直流调速系统的仿真………2087.1晶闸管开环直流调速系统仿真……………………2087.2转速单闭环直流调速系统仿真…117.3带电流截止负反馈的无静差转速负反馈调速系统2157.4转速电流双闭环直流调速系统仿真…217第8章交流调速系统的仿真4…………2228.1异步电机的恒压频比控制…………………………………………22281.1异步电机的稳态数学模型…22281.2基于稳态模型的恒压频比控制●非自垂自自自自自自自日非自·非阜自自dD自P章自自·D。●·Dd自……22682异步电机的矢量控制230821坐标变换与异步电机的动态模型230822转子磁场定向矢量控制……………………………………23583异步电机的直接转矩控制…………2468.31直接转矩控制基本原理………2468.3,2直接转矩控制系统…………24784永磁同步电机矢量控制2528.5无刷直流电机控制···本.4.非命自4··自自命单….·255第9章其他应用…………--26191镍氢电池模型………26192配网静止同步补偿器269,3有源电力滤波器…………D音2739.4Ⅴ SC-HVDO……………………………………………………27895混合动力汽车28496双馈风力发电系统…289参考文献中;,p日。自e非自单日q日a;日p卡日p·即甲甲是号早举可中4自司◆……295MATLAB基础知识MATLAB软件语言系统是当今流行的第四代计算机语言,由于它在科学计算、数据分析、系统建模与仿真螅、图形图像处理、网络控制、自动控制、通信系统、DSP处理系统、航天航空、生物医学、财务、电子商务等不同领域的广泛应用以及自身的独特优势,目前 MATLAB受到各研究领域的推崇和关注。学习一种软件,首先需要了解它的特点、使用环境、最基本的使用方法和重要的操作技巧。本章的日的在于使 MATLAB软件的初学者,能够借助本章的学习,为深入理解后续章节的内容,奠定必要的知识与方法基础。11 MATLAB简介1980年,美国的 Cleve moler博士在新墨西哥大学讲授线性代数课程时,发现采用高级语言编程极为不便,于是建立了 MATLAB( Matrix Laboralory的缩写),即矩阵实验室,早期开发 MATLAB软件是为了帮助学校的老师和学生更好地授课和学习。1984年,由美国MathWorks公司推出了商业版,经过二十余年的不断升级,目前 MATLAB最新版本为 MATLABR2008a。由于使用 MATLAB编程运算与进行科学计算的思路和表达方式完全一致,所以不像学习Basic、 Fortran和C语言等其他高级语言那样难以掌握,用 MATLAB编写程序犹如在演算纸上排列出公式与求解问题。在这个环境下,对所要求解的问题,用户只需简单地列出数学表达式,其结果便会由 MATLAB以数值或图形方式显示出来。从 MATLAB诞生开始,由于其高度的集成性和应用的方便性,以及它能非常快捷地实现科研人员的设想并节省科研时间,在高校中得到了广泛的应用与推广。它可以很方便地进行图形化输入输出,同时还具有丰富的函数库(工具箱),极易实现各种不同专业的科学计算功能。另外, MATLAB和其他高级语言也具有良好的接口,可以方便地与其他语言实现混合编程,这都进一步拓宽了它的应用范围和使用领域。在各大高等院校, MATLAB软件正在成为对数值、线性代数以及其他一些高等应用数学课程进行辅助教学的有力工具;在工程技术界, MATLAB软件也被用来构建与分析一些实际课题的数学模型,其典型的应用包括数值计算、算法预设计与骑证,以及一些特殊矩阵的计算应用,如统计、图像处理、自动控制理论、数字信号处理、系统识别和神经网络等。它包括了被称作工具箱( Toolbox)的各类应用问题的求解工具。工具箱实际上是对 MATLAB软件进行扩展应用的一系列 MATLAB函数(称为M函数文件),它可用来求解许多学科门类的数据处理与分析问题
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