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topsis 模糊综合评价
此教程用简单，平易近人的语言讲解了topsis 模糊综合评价模型，是初学者的一个好选择
- 2020-06-02下载
- 积分：1
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模糊理论基础
胡宝清模糊理论基础的第二版，很清楚、详细的对模糊理论的知识进行了介绍
- 2020-07-03下载
- 积分：1
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无线传感器网络所有定位算法matlab仿真代码
很全的无线传感器网络定位算法仿真代码 并且包含各个算法的论文 很全的无线传感器网络定位算法仿真代码 并且包含各个算法的论文
- 2020-12-05下载
- 积分：1
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Jsp+Servlet+Echarts实现动态数据可视化
Jsp+Servlet+Echarts实现动态数据可视化，对应讲解博文：https://blog.csdn.net/ITBigGod/article/details/81023802
- 2020-12-04下载
- 积分：1
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《统计学习方法》第2版课件
统计学习方法第二版 清华大学 可见
- 2020-11-30下载
- 积分：1
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英飞凌IGBT驱动培训资料
在电力电子装置中的一个重要组成部分,输入连接到控制电路的PWM信号输出端，输出连接到装置各IGBT的门极和发射极，将装置中的控制电路产生的数字PWM信号进行隔离传输和电平转换和功率放大,实现控制电路对IGBT进行开通和关断动作的控制，从而实现装置的功率变换功能。InfineontechnologiesIGBT Gate Drive: Power Suppliesa Gate driving voltage for IGBT+15Vturn-on is normally +15VDriver>□1a Gate driving voltage for IGBTOVturn-off can be oV or negativeWith Single Power Supply5V to-15V)a Negative gate driving voltage+15Vhelps IGBt switch off fasterremain in off state but itDriverneeds dual power suppliesOVWhether to use oV or negativegate driving voltage depends15VWith Dual Power Supplieson the requirement on costZH Liang - Al APperformance05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: InterfaceOpto-couplers is commonly used as interfacingdevices for applications where both signaltransmission and potential isolation are requiredOpto-couplers offers reliable isolation between IGBT(high-potential)& micro-controller(low-potential)Opto-couplers has long signal delay(us)and isexpensiveIsolation +VDpCCMicroDrivercontrollerZH Liang - Al AP05Dec2003Page 6for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveStandard configuration: 2 drivers, 2 power supplies, 2 opto-couplersAdvantages: standard, reliableDisadvantages: using opto-couplers, higher system costIsolation +VDDlCC1DriverCC1MicrocontrollerDD2+VCC2DriverCC2ZH Liang - Al AP05Dec2003Page 7for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveIn half-bridge IGBT drive, opto-couplers offer two functions(1)safety isolation &(2) shifting the potential of the gatesignal from uc potential to high-side potentialIf safety isolation between IGBT& micro-controller is notneeded, then"Level Shift" can replace opto-coupling andrealize function(2)OptoHigh-sideHigh-sidecouplerDriverIGBTMicro-Opto-LoW-sideLow-sidecontrollercouplerDriverIGBTZH Liang - Al AP05Dec2003Page 8for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive Level shiftI FeaturesHVc(600V/1200V)沿PULSERFILTERShort Signal DelayPULSE■Cost- effectiveGEN■ No Safety Isolationevel Shift Half-bridge DriverI BenefitHigh-side““°IGBTO Saving Opto-couplersLevel(lower system costShiftMicro● Wider range ofcontrollerLevelLow-side■■■■■直■口m留■Switching FrequencyShiftIGBT(higher flexibility)ZH Liang - Al AP05Dec2003Page 9for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: CLTNEWO CLT-Coreless Transformer (for signal transmissionu Coils(Primary Secondary Side)realized on SiliconO Short Signal Delay (allowing high or low switching frequencyu Lower Cost(compared to 1200V level-shift driver日 Safety IsolationCLT Half-bridge DriverHigh-sideCLT Single DriverIGBTCLTMicro-controllerCLTIGBTMicro-controllerLoW-sideIGBTZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strapBoot-strap circuit includes only a diode and a capacitora In half-bridge drive, the boot-strap circuit can replace the high-sidepower supply and make single-supply operation possibleWhen the low-side IGBT (or FWD)is on, the diode is forwardbiased and the capacitor is charged by the low-side power supplyvia the low-side IGBT and stores the energyWhen the low-side IGBt(and FWD)is OFF, the diode is reversebiased and blocks the dc-bus voltage to protect the low-sidecircuit. Meanwhile, the capacitor supplies energy to the high-sidedriverThe boot-strap capacitance should be high enough to keep thesupply voltage stable Capacitance needed can be calculatedbased on the working conditions and device parametersZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strap circuitConventional2心菲*|■3 high-side power supplies■1|oW- side power supplyUsing boot-strap circuit心体心心●3 diodes& capacitorso 1 low-side power supplyFeaturesa Diode: ultra-fast recoverya Capacitor: general-purposed ITAa Dependent on low-side IGBTBenefitsSaving 3 PS(transformer cost)22ZH Liang - Al AP05Dec2003Reducing wiring connectionPage 12for internal use onlyInfineon Technologies Asia Pacific
- 2020-12-11下载
- 积分：1
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ENVI常用扩展补丁
关于很多高分卫星的数据处理插件，适合ENVI4.8及以上用户，请叫我雷锋哦
- 2020-12-11下载
- 积分：1
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UFS3.0 SPEC
Universal Flash Storage (UFS) Version 3.0，JESD220D_UFS3.0.PDF，UFS3.0 SPEC，英文原版
- 2020-12-11下载
- 积分：1
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CST官方培训教程（中文）
CST官方培训教程（中文）有大量例子，从零开始，分为初、中、高级培训
- 2021-05-06下载
- 积分：1
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第二代小波变换的信号处理
第二代小波变换的信号处理，有助于理解二代小波与一代小波的区别与相同之处。
- 2020-12-04下载
- 积分：1
