电力系统电磁暂态计算理论
很好的电力系统电磁暂态计算方面的理论书籍，详细讲解了电力系统元件等值的方法，梯形积分、向前欧拉法、向后欧拉法都有介绍内容提要本祸结合国际上广泛使射的电砖街森计算程芹MTP,誊重舟绍电力和电气网终磁针态过程的计算机被的实用算法和援术,世括交直洸电力紧蛻和电气网络绽申机、变区器、鞫且线賡、电s、开关,可控硭、电抗器、避带器、电容器等各种线性贩非线性的集中參数与分布卖数元件,以及电力系统中赏的控剜系统的數竽型刷求溶方法。书中对坦磁暂薇模拟然說展势也提启了一些建设性的意见本书可件为电力、电气、电⊥制查、电气化铁路.通信等部门7工程技术人员扣科妍人的摻考书,也可作为大学高午学生和研究生汹H w DommelEMTP theory book内部出版物1986年电力统电磁暂态计算理论加拿大, w Dommel孪永庄林枭明曾喀华晖水刊电力出版社出版、发行〔北有三里惘路母各池新型书店经水利电力扑版社印刷厂印刷78?×19毫米1开本22,5张5千宁1991年8月第一版9年8月北京第一次即刷邛歎000L—2620朋rSBN了-2(-01337-8/TM37￡价14元译序电力系统的规划,设计、运行,电机、电器设备的研都必须对电力网络进行研究,电网研究的内容通常有短跸分析瀏流分析;稳定分析;电磁背态分析。其中电磁智态分析是最新的也是最为复杂的课题。饼究电磁暂态问灯朋物理模型和效字程序。电磁晳态分析程序LM山}便是日前网际通用的一种数程序。它规模大,功能强,最初加拿大不列類哥伦比平大学(UBC)的H,W, DOmmel教授创立,又经过很多专家的共同努力而月橥完美。美国邦纳维尔电力局(BPA)对程序的开发作出了很大的贡献近年来成立的包括美国、加拿大、日本及欧洲一些国家在内的EMTP联合发展中心(DCG)和在欧洲成立的另一个EMTP用户协会(LEC),都还在为该程序的改进提和推广普及进行着量工作,本书中提到的UBC版本,BPA版本和DCG版本系指以上述机构各自为主开发的不同版本我国于1981年引进FMTP程序,很快受到有关部门的重视,从1984年以来各地举办过多次研讨班,水利电力部还成立了EMP工作组(设在能源部电力科学研兖陇系统所日前我函MTP程序的拥有单位已避及高等院校、科斫、设计,运行和制造部门。在一些国家级重点项目的研究中都已使用了EMTP程序。尽箐如此,由于BMTP程序理论较新难度较大,国内的使用者普遍感到不易掌握,凼而使程序的多种功能没有得到充分利用。以到MH莫基人且W. ommel教授为主编写的本书,全面地介绍了EMTP中涉及的电力系统中各种元件的数学莫型和数值计算方法,分析了它们的固有误差和特度,还介绍了积几十年应用线的些有益的经验及进一步改进的方问。它的出版无疑会对程序消化吸收奠定坚实的基础,不仅有助于大专院校帐师生、电丿部门和制造部门的技术人虽掌握程序,而且有勁于提高他们的电磁暂态理论水平及編程能力,此外,太书肪讨论的间题对通信、电气化铁路、自动控制等部门也有重要的参考价值。本书笫四、五章和6~6.11由曾跗华翮译,第6.1~6,5节、第12,2~12.4节、第八、九章和附录ⅴI由林集明翻译,其余部分由李永庄翻译。译者对清华大学吴维韩、黄炜纲、郝逢年为本书所作的校对工作深表感谢,并炊迎读者对译文中的不矩和错误时提出批评和意见,符号说明下标符号说明下标念义下标意义actual实际ITsy绝缘addy涡流ir.t内部的dIr值近似的Ink逆变上IE(u铝装铁E VE平基均k转cage础limit极折限3卫ch支路left边break闪络负载char特的o环:ont合常芯伴临数了ow低master主合界机路耗的城间中Indie模current电流nedi修的delay延迟互正相earth大地8卫铭牌eddy涡等negr值The电气侧neutral序点精确卫ew新性的eXcoffset偏fault故发障电地open分机Dreer接原high的高o振hys磁进OUE输出闸令始游外空部的oved架incr自增加Phasd慰应pipeput输入JOS正于序)的下标意义下标意义prem刺级50uc日电派propa传播apark放地random随机给定了tg额定值Lar乒〗rEC已受端start开始简化结束整流surger的 idual剩余的switc]五开关RMS有效值smr对称turbine汽(水〕轮机SCP屏酰端点elf自Thev戴维南等值ser]e:串联Pca总的整定值totality变压器外皮trape梯形的short短路tuleshunt并联不饱和滑多slave电业部门从属voltage电乐lope斜率without不包括平滑苓(序)的上标符号说明上析意义上标意义b攴鑒预报值闭合三角形连接r化别造厂s短路修正t试算neTT新值old电业部门老值录译序符号说明第一章EMT解法介绍…第二章线性无耦合集中参数元件了2.1电阻R…2,I,1误差分析…■■■p冒■■2,12带有电阻献网络实钢……………"……""¨¨¨=422自电感I…………"……■■山■昏■21误差分析222利用并联电卵阻尼数值振荡223并联电蓝的物理意义182.24营有电感的网络实好↓.■1}●唱.甲司日·d-:;■·Pt-…·20电容C2,3.1误差分析■山Ldk L2,3.2利用串联电阻阻尼数值振荡…2..3串联电阻的物理意义…2.3.4帮有电容的网络实例……1·量···52.4R、L、C串联…2.5单相常规z形电路…P■■■■"甲,胃26第三章线性耦合藻中参教元件3.1耩合电阻[E]…3,1.1误差分析28312耦合支路插入节点方程组…283.1,3朝合电阻:恻……"""……“…¨293.2耦合电感LL…….2.1误姜分析……■■■甲32.2利用荆合并联电阻阻尼数位振荡1r晋+■23.23荆合并电阻的物理意义■萨■司323,4带有精合电感的网绺实例……3.3藕合电容[C1……pm聊聊hdP量看看「·日···「·■n44"…,…-…343.3.1误差分析………是昏■·L甲·■·.●■35332利用串联电阻阻尼效值振满333稠合串联电阻的物理意义3.3.4背有耦合电容的网络实例…*……………-……………33.4M相常规匹形电路……………咖■自·d血■画3.4.I[配]与[L]申联………………342[配]与LL]1串联……………薯四章架空物电线路……41线路参数………………41单根导线的线蔚参数A i4.1.1.1串联阻抗矩库41,12并电容矩阵2等值相导线的线路念数|■?■■■自m画日q卩q即1412,1消去地线4.32,构成零级麻4.1.2,3等值打哥线的化矩阵4124等值相异线的常规忑形电路4125连续地线和分段地统4.1,3平衡线路的序和零序参数■■。■■PTPT·平P■■rr■■〓584lt单回三相线路的正序和零芹拿效4.132平衡的相线路的正序和零序参4.1.33仅有零序舞合的两条同的三相线路4.14对称分量……………,,……,…暴甲甲A.15模量参数-……一一·,1、5,1模域中的线路屴程4.1,5,2充與高频近4.1.5,3求習态解的近似转换矩阵4,2EMTP的线路模型421交流稳态觚…∷…7742.⊥1M榍常规x形电路2单相线路的等值x形电路M想等值形电路4.22眢态解4,221常规军形电路4222L和C恒定的单相无损线42,2.3D’和C恒疤的M群无封线2,4具有恒定多数的单相和M相元畸变浅4.2.25带集竹电图的单相和M相线略从有频率租关参藪的单相和M相线盛第五章地下电缆995.1单芯电缆…串联阻抗·512并联导纳……:"+∴:0352平行单芯电缆……1045.3大地返回阻抗…………r-…:106,3.1半无限大坦中的埋设导缋10753,2无限大地屮的埋设导线l4953.3架空导线……I】0.5,3,4架空导线与埋设导线间的互阻抗1i05.4管形电缆1195,L管壁厚度无限(无大地返旧)……11蠢2管撥厚度有限(有大地返回)…·I135.5戒束导线和消丢地线……………1146埋设的管道11p57部分导体和有限元法…1f857.I側分为部分导体…I185.7、2有限元法…*11958模量参数…………12059EM①P的电缆模型…12I5,9.I交流稳态解………⊥25.92皙态解………………………1225921短电须5922单相电5.9.23多相电抛算六章变压器4b■136.!戴维南等值电路中的变压器…………………………………………………1308.2单相双绕組和三绕组变压器的感矩阵模型…1…*:n……#1326.2双绕組变压器…………………………F吾P■r.3622荆态电感矩阵………336.23三绕组变居器………13463单相双绕组和三绕组变压器的逆电感矩阵模型…卩··PPP中血會■身P會↓4『『P』』■4』4卩134831双娆组变压器…”…t…134632三骁组变压器……“…4…,………,“………,t……3564单相N线圈变压器的矩阵棋型…13765三相N线圈变压器的矩阵模型如聊电4唱b血口血善t■■自44》备■晶↓14065.1许算[R]和[L]2方法……………………■·日中1平6,52簪正三角形连绕组的零序歡据…14266励磁电流……………436B.1线性(不饱和励磁电流■■贔PP■昏4■●●p■命;h…………………]4381,1单相变压器6,6,t,2三相变压器6.3.2饱和影啊……■■晶晶■昌■…4……………】47662,1单柑变压器6,6,2,2二桕变压器663磁°和涡流损粔…………………I506,B,4剩磁………1……15367朝变压器……d血■■db晶·■白d■■■■4p…15468理蕉变压器4斗P■由1鲁4■『■司司pP即"最最具4l5569电位浮动的三角接法………l56610支持子程序和饱和变压器元件6.【0.1支持子程序 XFORMER…………………,………………l575.102支持子程序 BCTRAN………+…1576.103支持子程炸 TRELEG唱1·甲严■冒14_l576.10,5支持子程序 CONVERTI58E105饱和变压器元件·.早日和·甲·1·如即自·冒P4晶4日h晶h晶qL■L■IBD611频率相关的变压器模型……183算七章简蝉电压源和电清漂…1個由:67L电源与节点相连卜日p卩●甲◆中卩申■■■自日………L637.2两节点问的电流源∵…………L6373两节太间的电压源…………………日加甲■唱·LpP■■■曲即啁,4同一节点上多个电源…L657.5内部简单电源巫数……………■1?b■■7.6受电流控制的直流电压源………………………1687,6,上狼态解…1697,6,2暂态解…h1口170第八章三相同步电机.血4甲即會■dt■tI…………17281电气部分基本方程式……",…"…"*…4……………17382确定电气参数r17783机椃部分基本方程式…I828.4稳态模和初始条件…………血11自幽冒bPIr■858.41利用序疯进行初始化M"……"……“*……l883.42利用负序值进行初始化………:+190843利零序值进行初始化193844机被部分的初始化…甲1日3,5皙态解………………+b幽…49485.1解法概述…鲁■「↓·■■甲司唱昏■4▲止l95852电气部分暂态解197启53机被部分暂态解2u185,4预报和校正方怯………………22B54预报和月8.54.24,q轴伴雅电阻的平均值85,43E和的预报8.5.4.4旋转势的预报8.5,1,5选代方法8.6饱和298,61基本股定……209862稳态运行中的饱和……………■■……:…21186.3态条件下的饱和21286,4在EMTP中的实现方法r214B6,4.1毪态初始化8642誓态解8.65采旧Cnay特征抗时饱和影响…■■■d■前九章通用电机………………"…"""42791电气部分基本方程式…!·■↓q昏【hdl●pp■■■暴27B2确定电气参数……甲·D·■自昏■面■备聊22B9.3转换到相量-………2229.4机械部分……………血自··■■着■P量1am山m+++··22495稳态模型和树始条件………·■P1『『1甲a●42259.1三相同步电机952两相同步电机…53单相同步电机中·!bd如h■,4甲唱啁中
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Inside_NAND_Flash_Memories.pdf
Inside_NAND_Flash_Memories.pdfRino micheloni· Luca Crippa· Alessia marelliInside nand flashMemoriesSpringerRino micheloniLuca CrippaIntegrated Device TechnologyForward InsightsAgrate BrianzaNorth yorkItalCanadarino. micheloni@ieee. orgluca.crippa @ieee.orgAlessia marelliIntegrated Device Technologyagrate brianzaItalylessiamarelli@gmail.comISBN97890-481-9430-8e-ISBN97890-481-9431-5DOI10.1007/978-90-481-9431-5Springer Dordrecht Heidelberg London New YorkLibrary of Congress Control Number: 2010931597O Springer Science+Business Media B.V. 2010No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or byany means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without writtenbeing entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose ofpermission from the Publisher, with the exception of any material supplied specifically for the purpoCover design: eStudio Calamar SLPrinted on acid-free paperSpringerispartofSpringerScience+businessMedia(www.springer.com)PrefaceIn the last decade Flash cards became the most important digital storage supportIt is difficult to identify a single killer application(digital photography, MP3digital video, ...)or whether the success of this media support is due to itsusability in different applications. It is also difficult to state whether the recentlution in the infotainment area has been triggered by the availability of high-performance NAND Flash memories or if the extraordinary success of Flash cardsis a consequence of the establishment of new applicationsIn any case, independently of the cause-effect relationship linking new digitalapplications and Flash cards, to realize how NANd Flash memories entered in ourdaily life, it is sufficient to imagine as they would change our recent habits if theNAND memories disappeared suddenly. To take a picture it would be necessary tofind a film (as well as a traditional camera .), disks or even magnetic tapes wouldbe used to record a video or to listen a song, and a cellular phone would return tobe a simple mean of communication rather than a console for an extendedentertainmentThe development of nand Flash memories will not be set down on the mereevolution of these digital systems since a new killer application can trigger a furthersuccess for this memory support: the replacement of Hard Disk Drives(HDD)with Solid State Drives (SSD)The advantages of Ssd with respect to HDD are countless(higher read/writspeed, higher mechanical reliability, random access, silent operation, lower powerconsumption, lower weight, .. ) Nevertheless, the cost per gigabyte is stillsignificantly favorable to hDd and the success of ssd will depend only on theperformances that they will succeed in reachingThe present book, the fourth authored by rino micheloni and coworkers afterVLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and ErrorCorrection Codes for Non-volatile Memories, all published by Springer, tacklesall the main aspects related to NANd Flash memories, from the physicaltechnological, and circuit issues to their use in Flash cards and SsdsAfter an extended market overview(Chap. 1), Chap 2 has been conceived as aguide for the entire book, so that the reader can directly reach the heart of theproblems that interest himThe following chapters deepen physical and technological aspects. In particularChaps. 3 and 4 tackle technological and reliability issues of traditional FloatingGate NAND memories, respectively, while the state-of-the-art of charge trappingtechnologies is effectively summarized in Chap 5Ⅴ i PrefaceThe central part of the book is dedicated to circuit issues: logic( Chap. 6),sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12)Other basic topics related to circuit aspects are also analyzed, such as theimplementation of Double Data Rate interfaces( Chap. 7), while multilevel storage(2 bits per cell) is presented in Chap. 10Techniques adopted to increase memory reliability and yield are discussedin Chaps. 13 and 14, the former dealing with redundancy, the latter with ErrorCorrection Codes. The test flux used by nand memories manufactures is describedin Chap 15Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allowreaching the lower cost per gigabyte and that will conquer, in the next few years,the market of consumer applicationsThe last chapters are dedicated to the two most popular systems based onNAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationshipbetween Nand memories and system performances are highlightedFinally, Chap. 19 describes the effects of ionizing radiations on non-volatilememories, to understand whether NaNd memories can be safely used in spaceand military applicationsProf. Piero olivoDean of the Engineering FacultyUniversity of ferrara, ItalyAcknowledgementsAfter completing a project like a technical book, it is very hard to acknowledgeall the people who have contributed directly or indirectly with their work anddedicationFirst of all, we wish to thank all the authors of the contributed chaptersWe have to thank mark de Jongh for giving us the possibility of publishing thiswork and cindy zitter for her continuous supportLast but not least, we keep in mind all our present and past colleagues for theirsuggestions and fruitful discussionsRino. Luca and alessiaTable of contentsPrefaceAcknowledgementsvIII Market and applications for nand Flash memoriesGregory Wong2 NAND overview: from memory to systemsR. Micheloni, A Marelli and S. Commodaro3 Program and erase of Nand memory arrays55Cristoph Friederich4 Reliability issues of NAND Flash memoriesC. Zambelli. a. Chimenton and p. olivo5 Charge trap nand technologies115Alessandro grossi6 Control logic131A Marelli.R Micheloni andR. ravasio7 NAND DDR interface161Andrea silvagni8 Sensing circuits197L. Crippa and R. micheloni9 Parasitic effects and verify circuits235L. Crippa and R. michelonO MLC Storage261L Crippa and R Micheloni11 Charge pumps, voltage regulators and HV switchesR Micheloni and L Crippa
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