上海大学计算机组成原理历年试卷
上海大学计算机组成原理历年试卷，文档形式，内部资料。[X]补=0010011Y]补=00.11001:[-Y]补=10011(7分,过程4分,结果3分)被除数商说明0010011000000被除数与除数同号+1100111+[Y]补I1101000000*0余数语除数异号,商上011101000000*00左移1位011001上次商0,+Y]补011010000*01余数与除数同号,商10011010000*010左移1位+1100111上次商1,+Y]补0000001000*011余数与除数同号,商1000001000*0110左移1位+11001上次商1,十[-Y]补110100100*010余数与除数异号,商0+0010010上次商0,+Y]补11010110*01100余数与除数异号,商01010110冰011000左移1位011001商末位置1结果:0.110012、已知替换算法LRU当前的信息块在登记表中的排序为0、1、2、3、4、5,画图依次表示出在先后使用3、1、4时登记表中信息块排序的变化过程(0)(组分别是3、3、4分)原始使用3使用1使用440原则:把最近使用的资快提到最前面,替换最下面的3、已知内存地址为0~1M单元 Cache地址为01k单元,设每块为256个单元,设计一组组相连 Cache组织。(1)给出数学描述和说明(10)(2)出简图(图中的 Cache块和内存块应标明具体地址)(10描述(10分)具体分两组组相连映像方式是以组为单位,组与组间是直接映像组内是全相连映像例如, cache为4块将 cache分为两组每组512字节,分为两块此时取k=0,1则第j块内存地址映射为j=(i mod 2)*2+kk=0, 1图10分第1页(共6页)上海大学2003~2004学年秋季学期试卷(A卷)课程名:计算机组成原理学分:4(闭卷学号:姓名:院、系:成绩题号四五六七得分得、填空:(每格2分,共20分)l、存储器总体上按照存储介质分为2、存储器接到读/写命令到完成读/写操作所需要时间称为。存储器进行两次连续读/写操作所需要的最小间隔时间称为3、半导体动态RAM靠存储信息。4、直接由计算机硬件执行的程序是5、组成一个32K×8的存储器当分别选用1K×4位、16K×1位、2K×8位的三种不同规格的存储芯片时,各需片。得分、简答题(每题5分,共35分)1、画图并说明32位浮点数的规格化表示,并举例说明其精度及数据范围2、只读存储器分为那几类,各自的功能3、画图表小静态存储器地址信号首先选通时Adr、CS、Dout的开关特性信号次序)。并简述为什么试卷纸第2页(共6页)4、简述为保持 Cache和主存一致性而定义的 Cache的两种写入方式5、简述动态存储器刷新的两种工作方式6、简述段式和页式虚拟存储器的特点7、读写存储器的分类,各自的特点得分三、综合题(45)设X=0.10011,Y=0.11001写出一种两位定点乘法和一种位定点除法的计算过程并给出计算结果(15)FCLLUFLT.TV-了k平小T一廿性XJ试卷纸第3页(共6页)2、已知替换算法LRU当前的信息块在登记表中的排序为0、1、2、3、4、5,画图依次表示出在先后使用3、1、4时登记表中信息块排序的变化过程(10)。命题纸使用说明:1、字迹必须端正,以黑色碳素墨水书写在框线内,文字与试卷纸第4页(共6页)3、已知内存地址为0-M单元, Cache地址为0~1k单元设每块为256个单元,设计一组组相连 Cache组织。(1)给出数学描述和说明(10)(2)画出简图(图中的 Cache块和内存块应标明具体地址)(10)命题纸使用说明:1、字迹必须端正,以黑色碳素墨水书写在框线內,文字与草稿纸第5页(共6页命题纸使用说明:1、字迹必须端正,以黑色碳素墨水书写在框线内,文字与草稿纸第6页(共6贝丿
- 2020-12-03下载
- 积分：1
英飞凌IGBT驱动培训资料
在电力电子装置中的一个重要组成部分,输入连接到控制电路的PWM信号输出端，输出连接到装置各IGBT的门极和发射极，将装置中的控制电路产生的数字PWM信号进行隔离传输和电平转换和功率放大,实现控制电路对IGBT进行开通和关断动作的控制，从而实现装置的功率变换功能。InfineontechnologiesIGBT Gate Drive: Power Suppliesa Gate driving voltage for IGBT+15Vturn-on is normally +15VDriver>□1a Gate driving voltage for IGBTOVturn-off can be oV or negativeWith Single Power Supply5V to-15V)a Negative gate driving voltage+15Vhelps IGBt switch off fasterremain in off state but itDriverneeds dual power suppliesOVWhether to use oV or negativegate driving voltage depends15VWith Dual Power Supplieson the requirement on costZH Liang - Al APperformance05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: InterfaceOpto-couplers is commonly used as interfacingdevices for applications where both signaltransmission and potential isolation are requiredOpto-couplers offers reliable isolation between IGBT(high-potential)& micro-controller(low-potential)Opto-couplers has long signal delay(us)and isexpensiveIsolation +VDpCCMicroDrivercontrollerZH Liang - Al AP05Dec2003Page 6for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveStandard configuration: 2 drivers, 2 power supplies, 2 opto-couplersAdvantages: standard, reliableDisadvantages: using opto-couplers, higher system costIsolation +VDDlCC1DriverCC1MicrocontrollerDD2+VCC2DriverCC2ZH Liang - Al AP05Dec2003Page 7for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveIn half-bridge IGBT drive, opto-couplers offer two functions(1)safety isolation &(2) shifting the potential of the gatesignal from uc potential to high-side potentialIf safety isolation between IGBT& micro-controller is notneeded, then"Level Shift" can replace opto-coupling andrealize function(2)OptoHigh-sideHigh-sidecouplerDriverIGBTMicro-Opto-LoW-sideLow-sidecontrollercouplerDriverIGBTZH Liang - Al AP05Dec2003Page 8for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive Level shiftI FeaturesHVc(600V/1200V)沿PULSERFILTERShort Signal DelayPULSE■Cost- effectiveGEN■ No Safety Isolationevel Shift Half-bridge DriverI BenefitHigh-side““°IGBTO Saving Opto-couplersLevel(lower system costShiftMicro● Wider range ofcontrollerLevelLow-side■■■■■直■口m留■Switching FrequencyShiftIGBT(higher flexibility)ZH Liang - Al AP05Dec2003Page 9for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: CLTNEWO CLT-Coreless Transformer (for signal transmissionu Coils(Primary Secondary Side)realized on SiliconO Short Signal Delay (allowing high or low switching frequencyu Lower Cost(compared to 1200V level-shift driver日 Safety IsolationCLT Half-bridge DriverHigh-sideCLT Single DriverIGBTCLTMicro-controllerCLTIGBTMicro-controllerLoW-sideIGBTZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strapBoot-strap circuit includes only a diode and a capacitora In half-bridge drive, the boot-strap circuit can replace the high-sidepower supply and make single-supply operation possibleWhen the low-side IGBT (or FWD)is on, the diode is forwardbiased and the capacitor is charged by the low-side power supplyvia the low-side IGBT and stores the energyWhen the low-side IGBt(and FWD)is OFF, the diode is reversebiased and blocks the dc-bus voltage to protect the low-sidecircuit. Meanwhile, the capacitor supplies energy to the high-sidedriverThe boot-strap capacitance should be high enough to keep thesupply voltage stable Capacitance needed can be calculatedbased on the working conditions and device parametersZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strap circuitConventional2心菲*|■3 high-side power supplies■1|oW- side power supplyUsing boot-strap circuit心体心心●3 diodes& capacitorso 1 low-side power supplyFeaturesa Diode: ultra-fast recoverya Capacitor: general-purposed ITAa Dependent on low-side IGBTBenefitsSaving 3 PS(transformer cost)22ZH Liang - Al AP05Dec2003Reducing wiring connectionPage 12for internal use onlyInfineon Technologies Asia Pacific
- 2020-12-11下载
- 积分：1
