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single-objective
single-objective matlab code
- 2012-10-08 22:30:04下载
- 积分：1
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mel1
matlab实现mel倒谱系数提取的子函数(matlab achieve mel cepstral coefficients extracted Functions)
- 2015-07-31 10:33:08下载
- 积分：1
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count_water__line_ok
用matlab中的hough变换检测茶杯中的水位线，期间做了些限制以使的计算量变小(Using the hough transform matlab detection cup of water line, during some restrictions in order to enable the calculation of quantitative small)
- 2008-01-14 19:03:09下载
- 积分：1
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MU_MIMO
多用户MIMO算法仿真，包括BD,ZF,MMSE等(multiuser MIMO simulation)
- 2010-11-29 15:13:23下载
- 积分：1
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matlab-for-edge-detection
说明： 边缘检测的matlab实现。详细介绍了各种边缘检测用法(Edge detection matlab implementation. Details the use of a variety of edge detection)
- 2011-03-28 08:54:53下载
- 积分：1
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InvertedPendulumSystem
】通过建立倒立摆系统的数学模型,应用状态反馈控制配置系统极点设计倒立摆系统的
控制器,实现其状态反馈,从而使倒立摆系统稳定工作。之后通过MA TLAB 软件中Simulink
工具对倒立摆的运动进行计算机仿真,仿真结果表明,所设计方法可使系统稳定工作并具有良
好的动静态性能(] Through the establishment of an inverted pendulum system mathematical model, the application of state feedback control design configuration of the system pole inverted pendulum system controller, to achieve its state-feedback, so that the work of the inverted pendulum system is stable. After the adoption of MA TLAB software Simulink tool for inverted pendulum movement of the computer simulation, simulation results show that the design work will enable the system is stable and has good static and dynamic performance)
- 2007-08-27 10:49:02下载
- 积分：1
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matalb-function-files-power-system
collection of huge and helpful function files and examples of power system
- 2015-03-12 17:03:36下载
- 积分：1
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Rectifier_spwm2
Three phase rectifier open loop operation demonstrated. 3 Leg converter use SPWM to produce DC output.
Features:
- Ability to control output dc voltage by varying the modulation index
- Optional feature to inject 3rd Harmonic Injection if required.
- Automated post simulation plots to demonstrate input & out voltages.
- 2013-12-20 14:23:12下载
- 积分：1
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sort
用于神经元峰电位主成分分析提取特征系统聚类进行分类(use for classfy)
- 2010-05-11 18:42:19下载
- 积分：1
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205-GHz-AlInN-HEMT-EDL_05545347-(2)
205-GHz (Al,In)N/GaN HEMTs.more than 15 years of development,
AlGaN/GaN high-electron-mobility transistors (HEMTs)
have become the most technologically mature form of GaNbased
HEMTs. There is, however, growing evidence that the
total strain (i.e., the lattice-mismatch and piezoelectric contributions)
limits the reliability of conventional AlGaN/GaN
HEMTs
- 2014-12-06 01:06:50下载
- 积分：1
