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KCF,ECO_HC.DSST等十种算法在OTB100的TRE,SRE矩阵结果
资源包含KCF,DSST,ECOHC,SAMF,Staple,LMCF,LCT,SRDCF,SRDCFdecon,BACF十个目标跟踪算法在OTB100的TRE,SRE矩阵结果， 其中包括了OTB50和OTB2013。可以节省很多跑代码的时间。
- 2020-06-21下载
- 积分：1
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禁用并启用本地连接.bat
有多个内网，局域网复杂时候，有时候开机会获取别的ip导致上不了网，需要禁用再启用本地连接才行。本批处理运行时候会最小化。另外网卡名字不是默认本地连接的话，需要修改批处理内 本地连接 为再用网卡名。譬如本地连接2
- 2021-05-06下载
- 积分：1
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预报误差法参数辨识-松弛算法(原理及matlab算例)
预报误差法参数辨识-松弛算法(原理及matlab算例)，方崇智，过程辨识，清华大学出版社。单输入单输出情况见http://download.csdn.net/source/1808608
- 2020-12-02下载
- 积分：1
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语音信号倒谱的matlab程序
我自己编写的求语音信号倒谱的程序，并且将求解结果和matlab工具箱自带的倒谱函数计算结果相对比，两者完全一致。通过这个程序，也可以加强对matlab自带函数的理解
- 2020-11-30下载
- 积分：1
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ansys焊接移动热源程序
ansys移动热源程序ansys有限元分析，焊接热源移动程序源代码
- 2020-06-29下载
- 积分：1
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CBF算法matlab程序
常规波束形成CBF算法程序 分别加白噪声与相关噪声 有图有真相
- 2020-11-30下载
- 积分：1
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遗传算法优化神经网络的拓扑结构与权值
【实例简介】遗传算法(GA)和人工神经网络(ANN)的相互结合有辅助式和合作式两种方式.本文在此基础上提出了融合、BP_GA和GA_BP三种算法,并采用GA_BP算法同时优化BP神经网络的结构、权值和阈值,研究和实现了一套先进的编码技术和进化策略,克服了传统BP神经网络经验尝试方法的盲目性.实例优化与检验结果表明:遗传算法优化获得的神经网络比由经验尝试法得到的BP网络性能更优异,方法更合理.
- 2021-11-11 00:31:23下载
- 积分：1
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IEEE 802.3-2018
IEEE 802.3-2018最新版本, IEEE Standard for Ethernet include section 1 to 8.
- 2021-05-06下载
- 积分：1
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Fluent动网格和VOF详细设置教程
用Gambit画网格，Fluent做动网格，计算域含自由液面VOF，每步设置均有截图
- 2020-12-12下载
- 积分：1
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英飞凌IGBT驱动培训资料
在电力电子装置中的一个重要组成部分,输入连接到控制电路的PWM信号输出端，输出连接到装置各IGBT的门极和发射极，将装置中的控制电路产生的数字PWM信号进行隔离传输和电平转换和功率放大,实现控制电路对IGBT进行开通和关断动作的控制，从而实现装置的功率变换功能。InfineontechnologiesIGBT Gate Drive: Power Suppliesa Gate driving voltage for IGBT+15Vturn-on is normally +15VDriver>□1a Gate driving voltage for IGBTOVturn-off can be oV or negativeWith Single Power Supply5V to-15V)a Negative gate driving voltage+15Vhelps IGBt switch off fasterremain in off state but itDriverneeds dual power suppliesOVWhether to use oV or negativegate driving voltage depends15VWith Dual Power Supplieson the requirement on costZH Liang - Al APperformance05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: InterfaceOpto-couplers is commonly used as interfacingdevices for applications where both signaltransmission and potential isolation are requiredOpto-couplers offers reliable isolation between IGBT(high-potential)& micro-controller(low-potential)Opto-couplers has long signal delay(us)and isexpensiveIsolation +VDpCCMicroDrivercontrollerZH Liang - Al AP05Dec2003Page 6for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveStandard configuration: 2 drivers, 2 power supplies, 2 opto-couplersAdvantages: standard, reliableDisadvantages: using opto-couplers, higher system costIsolation +VDDlCC1DriverCC1MicrocontrollerDD2+VCC2DriverCC2ZH Liang - Al AP05Dec2003Page 7for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveIn half-bridge IGBT drive, opto-couplers offer two functions(1)safety isolation &(2) shifting the potential of the gatesignal from uc potential to high-side potentialIf safety isolation between IGBT& micro-controller is notneeded, then"Level Shift" can replace opto-coupling andrealize function(2)OptoHigh-sideHigh-sidecouplerDriverIGBTMicro-Opto-LoW-sideLow-sidecontrollercouplerDriverIGBTZH Liang - Al AP05Dec2003Page 8for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive Level shiftI FeaturesHVc(600V/1200V)沿PULSERFILTERShort Signal DelayPULSE■Cost- effectiveGEN■ No Safety Isolationevel Shift Half-bridge DriverI BenefitHigh-side““°IGBTO Saving Opto-couplersLevel(lower system costShiftMicro● Wider range ofcontrollerLevelLow-side■■■■■直■口m留■Switching FrequencyShiftIGBT(higher flexibility)ZH Liang - Al AP05Dec2003Page 9for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: CLTNEWO CLT-Coreless Transformer (for signal transmissionu Coils(Primary Secondary Side)realized on SiliconO Short Signal Delay (allowing high or low switching frequencyu Lower Cost(compared to 1200V level-shift driver日 Safety IsolationCLT Half-bridge DriverHigh-sideCLT Single DriverIGBTCLTMicro-controllerCLTIGBTMicro-controllerLoW-sideIGBTZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strapBoot-strap circuit includes only a diode and a capacitora In half-bridge drive, the boot-strap circuit can replace the high-sidepower supply and make single-supply operation possibleWhen the low-side IGBT (or FWD)is on, the diode is forwardbiased and the capacitor is charged by the low-side power supplyvia the low-side IGBT and stores the energyWhen the low-side IGBt(and FWD)is OFF, the diode is reversebiased and blocks the dc-bus voltage to protect the low-sidecircuit. Meanwhile, the capacitor supplies energy to the high-sidedriverThe boot-strap capacitance should be high enough to keep thesupply voltage stable Capacitance needed can be calculatedbased on the working conditions and device parametersZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strap circuitConventional2心菲*|■3 high-side power supplies■1|oW- side power supplyUsing boot-strap circuit心体心心●3 diodes& capacitorso 1 low-side power supplyFeaturesa Diode: ultra-fast recoverya Capacitor: general-purposed ITAa Dependent on low-side IGBTBenefitsSaving 3 PS(transformer cost)22ZH Liang - Al AP05Dec2003Reducing wiring connectionPage 12for internal use onlyInfineon Technologies Asia Pacific
- 2020-12-11下载
- 积分：1
