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cesium中文文档CHM
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- 2021-08-07 00:31:01下载
- 积分：1
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移相式全桥电源控制器的设计与Matlab仿真分析
移相式全桥电源控制器的设计与Matlab仿真分析。
- 2020-12-09下载
- 积分：1
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python爬虫爬取美团商家数据完整版
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- 2020-12-06下载
- 积分：1
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citrix xenapp 6.5 lic 20 citrix 破解 许可证 +使用说明+安装教程 亲测可用
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- 2021-05-07下载
- 积分：1
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多目标柔性车间调度的Pareto 混合禁忌搜索算法
【实例简介】针对最小化最大完成时间、总机床负荷及最大机床负荷的多目标柔性作业车间调度问题, 提出了一种
带有Pareto 档案集的混合禁忌搜索算法。该算法为每次迭代产生的邻域解集进行Pareto 非支配排序, 选择第一前
沿的解用于Par et o 档案集更新, 并给出了一种Par eto 档案集快速更新算法。为减小邻域搜索空间, 结合问题特征,
设计了基于公共关键块结构的插入邻域和交换邻域。通过3 个经典算例的实验仿真, 以及与其他算法的比较, 验
证了该算法的可行性和有效性。
- 2021-10-30 00:33:12下载
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PCA故障诊断matlab实现
matlab 实现PCA故障诊断功能，带测试测试数据，可直接运行
- 2020-12-05下载
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一种求解带时间窗车辆路径问题的混合差分进化算法
时间窗的车辆路径问题进行研究，建立以最小化车辆数量和行驶路程为目标的多目标数学模型，提出一种结合改进差分进化算法和变邻域下降搜索的基于Pareto支配的混合差分进化算法。首先重新定义了个体的生成方式。其次，结合双种群策略和变邻域下降搜索技术来平衡算法的全局探索能力和局部开发能力，并在搜索过程中用随机个体替代种群中的重复个体，维持种群的多样性。然后引入Pareto支配的概念来评价个体的优劣性，并采用擂台法则构造非支配解集其中,N是种群规模,gem为当前进化代数, gem为最大进化按照这种方法,直到所有的顾客都被服务。这种解码方法可代数。以使解码后的路径和解码前染色体中所对应的路径方案·在进化过程中,采用双种群机制,使算法既能从局部极值致,并且使用车辆的数量可以在解码过程中灵活动态地获得,的邻域跳转到全局最优解的邻域,又能在全局最优解的邻域从而实现对车辆数量的自动寻优。例如染色体串361857内进行精细搜索,在每代进化完后通过子种群重组实现信息294,经过路径解码为:路线1:0→3→-6→0;路线2:0→1→8交流和融合,平衡算法的全局探索能力和局部开发能力→57→0;路线3:0→2→9-4→0随着进化过程的进行,种群中的个体会趋于一致,因此在3.3.2初始种群生成每次执行完变异、交义、选择操作后,采用随机个体替换掉种产生初始种群时,为了保证种群的多样性,其中90%的群中的重复个体,维持种群的多样性,以增强种群的全局探索个体采用N个顾客节点随机排列的方式来产生,应用前向插能力,然后从种群中随机选取若干个个体进行变邻域下降搜启发式算法(PFH)来生成剩下10%的个体。索进一步提高算法的局部开发能力降低算法陷入局部最优3.3.3变异操作的风险。鉴于标准差分进化算法采用实数编码,不能直接应用于3.2算法步骤VRPW问题,由于采用了自然数编码,因此重新设计了变异基丁以上的算法思想描述,混合差分进化算法的具体步操作方式来产生变异个体。由标准DE算法可知,变异个体骤如下是由目标种群中随机选择的3个目标个体相互作用的结果步骤1设置算法的相关参数,生成算法的初始种群设记x=[x,x2,…,x]V=[1,2,进化代数gen=0;[uE,1,t2,…,n]分别为第G代目标种群变异种群和试验步骤2根据 Pareto支配思想对种群中的个体适应值进种群的第z个个体。行评价,利用擂台法则和拥挤距离机制将种群个体分层排序,(1)P1子种群采用“DE/best/1”变异策略,重新定义得到每个个体的非支配层等级和拥挤距离值;v=g(F⑧g(x,Y),X)步骤3按照个体的非支配层等级和拥挤距离,并根据式中,1r2是区间[1,n里互不相等的整数;X是当前目式(12)式(13将种群划分为两个不同大小的子群P1和P2标种群中最好的个体,在本文中从非支配层等级序号最小的步骤4P1子群执行DE/bes1变异策略,P2子群执行非支配层中随机选取;F为缩放因子,且F∈[0,门DE/rand/1变异策略,并根据3.3.4节执行交叉操作;式(14)由两部分组成,第一部分为步骤5将初始种群与子群P1、P2重组为一个混合种△=F⑧g(X°,Y)群g(班,X),rand()
- 2020-12-09下载
- 积分：1
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基于单片机智能灯光控制系统
基于单片机智能灯光控制系统。内含c51源代码，原理图，元件清单
- 2020-07-03下载
- 积分：1
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Inside_NAND_Flash_Memories.pdf
Inside_NAND_Flash_Memories.pdfRino micheloni· Luca Crippa· Alessia marelliInside nand flashMemoriesSpringerRino micheloniLuca CrippaIntegrated Device TechnologyForward InsightsAgrate BrianzaNorth yorkItalCanadarino. micheloni@ieee. orgluca.crippa @ieee.orgAlessia marelliIntegrated Device Technologyagrate brianzaItalylessiamarelli@gmail.comISBN97890-481-9430-8e-ISBN97890-481-9431-5DOI10.1007/978-90-481-9431-5Springer Dordrecht Heidelberg London New YorkLibrary of Congress Control Number: 2010931597O Springer Science+Business Media B.V. 2010No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or byany means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without writtenbeing entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose ofpermission from the Publisher, with the exception of any material supplied specifically for the purpoCover design: eStudio Calamar SLPrinted on acid-free paperSpringerispartofSpringerScience+businessMedia(www.springer.com)PrefaceIn the last decade Flash cards became the most important digital storage supportIt is difficult to identify a single killer application(digital photography, MP3digital video, ...)or whether the success of this media support is due to itsusability in different applications. It is also difficult to state whether the recentlution in the infotainment area has been triggered by the availability of high-performance NAND Flash memories or if the extraordinary success of Flash cardsis a consequence of the establishment of new applicationsIn any case, independently of the cause-effect relationship linking new digitalapplications and Flash cards, to realize how NANd Flash memories entered in ourdaily life, it is sufficient to imagine as they would change our recent habits if theNAND memories disappeared suddenly. To take a picture it would be necessary tofind a film (as well as a traditional camera .), disks or even magnetic tapes wouldbe used to record a video or to listen a song, and a cellular phone would return tobe a simple mean of communication rather than a console for an extendedentertainmentThe development of nand Flash memories will not be set down on the mereevolution of these digital systems since a new killer application can trigger a furthersuccess for this memory support: the replacement of Hard Disk Drives(HDD)with Solid State Drives (SSD)The advantages of Ssd with respect to HDD are countless(higher read/writspeed, higher mechanical reliability, random access, silent operation, lower powerconsumption, lower weight, .. ) Nevertheless, the cost per gigabyte is stillsignificantly favorable to hDd and the success of ssd will depend only on theperformances that they will succeed in reachingThe present book, the fourth authored by rino micheloni and coworkers afterVLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and ErrorCorrection Codes for Non-volatile Memories, all published by Springer, tacklesall the main aspects related to NANd Flash memories, from the physicaltechnological, and circuit issues to their use in Flash cards and SsdsAfter an extended market overview(Chap. 1), Chap 2 has been conceived as aguide for the entire book, so that the reader can directly reach the heart of theproblems that interest himThe following chapters deepen physical and technological aspects. In particularChaps. 3 and 4 tackle technological and reliability issues of traditional FloatingGate NAND memories, respectively, while the state-of-the-art of charge trappingtechnologies is effectively summarized in Chap 5Ⅴ i PrefaceThe central part of the book is dedicated to circuit issues: logic( Chap. 6),sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12)Other basic topics related to circuit aspects are also analyzed, such as theimplementation of Double Data Rate interfaces( Chap. 7), while multilevel storage(2 bits per cell) is presented in Chap. 10Techniques adopted to increase memory reliability and yield are discussedin Chaps. 13 and 14, the former dealing with redundancy, the latter with ErrorCorrection Codes. The test flux used by nand memories manufactures is describedin Chap 15Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allowreaching the lower cost per gigabyte and that will conquer, in the next few years,the market of consumer applicationsThe last chapters are dedicated to the two most popular systems based onNAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationshipbetween Nand memories and system performances are highlightedFinally, Chap. 19 describes the effects of ionizing radiations on non-volatilememories, to understand whether NaNd memories can be safely used in spaceand military applicationsProf. Piero olivoDean of the Engineering FacultyUniversity of ferrara, ItalyAcknowledgementsAfter completing a project like a technical book, it is very hard to acknowledgeall the people who have contributed directly or indirectly with their work anddedicationFirst of all, we wish to thank all the authors of the contributed chaptersWe have to thank mark de Jongh for giving us the possibility of publishing thiswork and cindy zitter for her continuous supportLast but not least, we keep in mind all our present and past colleagues for theirsuggestions and fruitful discussionsRino. Luca and alessiaTable of contentsPrefaceAcknowledgementsvIII Market and applications for nand Flash memoriesGregory Wong2 NAND overview: from memory to systemsR. Micheloni, A Marelli and S. Commodaro3 Program and erase of Nand memory arrays55Cristoph Friederich4 Reliability issues of NAND Flash memoriesC. Zambelli. a. Chimenton and p. olivo5 Charge trap nand technologies115Alessandro grossi6 Control logic131A Marelli.R Micheloni andR. ravasio7 NAND DDR interface161Andrea silvagni8 Sensing circuits197L. Crippa and R. micheloni9 Parasitic effects and verify circuits235L. Crippa and R. michelonO MLC Storage261L Crippa and R Micheloni11 Charge pumps, voltage regulators and HV switchesR Micheloni and L Crippa
- 2020-12-08下载
- 积分：1
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LMS算法自适应波束形成
Matlab仿真实现基于LMS算法的自适应波束形成
- 2020-12-01下载
- 积分：1
