贝叶斯网络学习、推理与应用
专门讲贝叶斯网络学习的书籍，很经典，需要学习的可以下载图书在版编目(CIP)数据贝叶斯网络学习推理与应用王双成著.一上海:立信会计出版社,20102lsBN978-754292470-4I.①贝…Ⅱ.①王….①贝叶斯推断Ⅳ①0212中国版本图书馆CP数据核字(2010)第07142号责任编辑赵志梅封面设计周祟文贝叶斯网络学习、推理与应用出版发行立信会计出版社地址上海市中山西路2230号邮政编码20035电话(021)64411389传真(021)644125网址www.lirinaph.comE-mail kaph@ sh163 net网上书店www.shl-.netTel:(021)6411071经销各地新华书店印刷上海申松立信印刷有限责任公司开本890毫米X1240毫米/32印张9375字数254千字版次2010年2月第1版印次2010年2月第1次书号IsBN978-7-54292470-4/0定价20.00元如有印订差错,请与本社联系调换内容简介贝叶斯网络是概率理论与图形理论的结合,围绕的一个基本问题是联合概率计算。基于贝叶斯网络可进行联合概率的条件和边缘分解从而有效降低运算复杂性并解决与联合概率计算有关的一系列向题。贝叶斯网络已在许多领域得到了广泛的应用,是不确定性知识表示和推理的有力工具。本书按照贝叶斯网络基础、学习、推理、集成和应用的框架介绍贝叶斯网络的相关理论、方法和算法,有助于读者对贝叶斯网络理论体系的认识和理解,可供相关专业的高年级本科生、研究生和科研人员学习与参考贝叶斯网络( Bayesian networks)是描述随机变量之间依赖关系的图形模式,被广泛用于不确定性问题的智能化求解。它具有多功能性、有效性和开放性(是一个能够集成其它智能技术与数据处理方法的平台)等特征,能够有效地转化数据为知识(具有形象直观的知识表示形式),并利用这些知识进行推理(具有类似于人类思维的推理方式),以解决分析、预测和控制等方面的问题。其有效性已在风险管理、信息融合、医疗诊断、系统控制和生物信息分析等许多领域得到验证。自从20世纪80年代后期加利福尼亚大学计算机科学系 Pearl(1988)给出贝叶斯网络的严格定义并创建贝叶斯网络基础理论体系以来,贝叶斯网络获得了长足的发展。这些研究主要从贝叶斯网络学习推理、集成和应用四个方面展开,出现了许多经典的方法和算法,也解决了大量的实际问题。本书共分五个部分。第一部分是贝叶斯网络基础,包插第1、第2、第3章。第1章介绍在贝叶斯网络研究中经常使用的一些概率公式和方法。第2章从概率模式、图形模式和它们之间联系的视角简要阐述贝叶斯网络的基础理论。第3章绐出贝叶斯网络学习和推理中可能用到的一些量化方法和标准第二部分是贝叶斯网络学习,包括第4章至第10章。这儿章分别从具有完整数据、丢失数据、隐藏变量、连续变量、噪声和小数据集等情况给出了一系列贝叶斯网络学习方法,以及随环境变化的贝叶斯网络更新算法。第三部分是贝叶斯网络推理,包括第11、第12章。第11章从贝叶斯网络信念更新和信念修正两个方面简要介绍经典的准确和近似推贝叶斯劂络学习、推瑰与应用理方法。第12章给出一系列贝叶斯网络分类器(分类预测推理)。第四部分是贝叶斯网络集成,包括第13章至第16章。这几章介绍将贝叶斯网络与因果理论、决策理论、可能理论和时序过程相结合而得到的因果贝叶斯网络、决策贝叶斯网络(影响图)、可能贝叶斯网络(可能网)和动态贝叶斯网络。第五部分是贝叶斯网络应用,包括第17、笫18章。第17章介绍基于贝叶斯网络的聚类分析方法。第18章给出贝叶斯网络在预警和评估等方面的应用。本书是作者在多年从事贝叶斯网络研究基础上整理而成的,其撰写和出版得到国家自然科学基金(60675036)、上海市教委重点学科基金(51702)和上海市教委科研创新重点项目(09z202)的资助。王双成2009年11月于上海立信会计学院录第一部分贝叶斯网络基础第1章概率论基础1.1概率计算公式1.2贝叶斯方法33561.3贝叶斯概率音要鲁要是音音吾辛音晋晋费音省普辛音萨自即鲁音普鲁香备善鲁曹普辛鲁曹曹鲁鲁第2章贝叶斯网络基础理论…2.1概率模式中的条件独立性2.2图形模式中的d- separation性102.3条件独立性与d- separation性之间的联系…2.4贝叶斯网络基本定理……122.5贝叶斯网络模型…………………………122.6变量之间基本依赖关系和结点之间基本结构……………14第3章常用的检验方法和评价标准153.1变量之间依赖关系检验…153.2贝叶斯网络结构常用打分标准…183.3分类准确性评价标准…………243.4贝叶斯网络学习可靠性评价标准…28第二部分贝叶斯网络学习第4章具有完整数据的贝叶斯网络学习314.1基于打分搜索的贝叶斯网络结构学习……………………312贝叶斯网络学习、推理与应用4.2基于依赖分析的贝叶斯网络结构学习36第5章具有丢失数据的贝叶斯网络学习…………455.1基于近似打分搜索的结构学习………455.2基于 Gibbs sampling和依赖分析的贝叶斯网络结构学习…音非垂48第6章具有隐藏变量的贝叶斯网络学习是·音音曹面喜鼻口要音·面鲁要普鲁看豪556.1不考虑隐藏变量的贝叶斯网络结构和道德图学习………556.2发现隐藏变量6.3确定隐藏变量取值和维数…………………………………586.4确定局部结构……606.5实验与分析………………………………………60第7章具有连续变量的贝叶斯网络学习D看口637.1不离散化连续变量的贝叶斯网络学习……637.2离散化连续变量的贝叶斯网络学习…66第8章具有噪声的贝叶斯网络学习…………788.1噪声平滑方法……798.2噪声平滑过程………………………808.3实验与分析82第9章小数据集贝叶斯网络学习…………………879.1小数据集贝叶斯网络结构学习……889.2小数据集贝叶斯网络多父结点参数的修复……96第10章贝叶斯网络更新学习看看dt10.1贝叶斯网络增量学习…●鲁···。靳鲁鲁毒●毒。鲁鲁■。音啬·最番着着鲁音音·自啬10310.2贝叶斯网络适应性学习………1410第三部分贝叶斯网络推理第11章贝叶斯网络基本推理11711.1统计推断……………………11711.2贝叶斯网络中的信念更新………………………11911.3贝叶斯网络中的信念修正………132第12章贝叶斯网络分类推理p由要中。;中叠鲁量。自·申中··画电·13612.1贝叶斯分类器…13712.2朴素贝叶斯分类器…14012.3广义朴素贝叶斯分类器……s14412.4TAN分类器………14612.5贝叶斯网络分类器…15312.6基于类约束的贝叶斯网络分类器………15612.7基于贝叶斯网络的特征子集选择要鲁费鲁量要鲁卧电香曹15812.8分类器的训练与泛化………………………………17212.9基于贝叶斯网络的联合预测………………………174第四部分贝叶斯网络集成第13章因果贝叶斯网络;音p即曹看最看晋看看看面画哥垂晶最音是看语音西卣垂17713.1单连通因果网学习s…………17813.2基于依赖分析的因果贝叶斯网络结构学习番备普最看啬■曹音音番春17813.3基于结点排序和局部打分-搜索的因果贝叶斯网络结构学习18513.4因果贝叶斯网络参数学习……18813.5基于贝叶斯网络的因果知识表示………………18913.6因果量化分析189第14章决策贝叶斯网络l914贝叶斯网络学习、箍理与应用14.1影响图的构成19114.2影响图的基本变换和最优决策…画·垂画画……19214.3影响图举例…………………………193第15章可能贝叶斯网络…19815.1可能网的概念鲁非鲁中·中鲁鲁·普西·鲁善鲁鲁善善申善鲁曹鲁鲁善善@·售鲁善鲁鲁登要19815.2可能网结构学习……202第16章动态贝叶斯网络……………………………20416.1一般动态贝叶斯网络20416.2具有平稳性和马尔可夫性假设约束的动态贝叶斯网络…20516.3几种特殊的动态贝叶斯网络………………………………21016.4动态贝叶斯网络分类器…………………………211第五部分贝叶斯网络应用第17章贝叶斯网络用于聚类分析………………21717.1离散数据聚类………………21717.2自动混合数据聚类— AutoClass…22217.3基于 Gibbs sampling的混合数据聚类225第18章贝叶斯网络用于预测23518.1经济周期波动转折点预测…23518.2风险预警23618.3风险评估…244附录常用贝叶斯网络…………………………………………250参考文献270
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MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
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