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模拟散斑图的生成
用来生成模拟散斑图的matlab程序，输入整像素位移与亚像素位移，散斑数量，散斑亮度，图片分辨率，可以得到一幅原始图像和一幅进行过位移的图像
- 2021-05-07下载
- 积分：1
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Inside_NAND_Flash_Memories.pdf
Inside_NAND_Flash_Memories.pdfRino micheloni· Luca Crippa· Alessia marelliInside nand flashMemoriesSpringerRino micheloniLuca CrippaIntegrated Device TechnologyForward InsightsAgrate BrianzaNorth yorkItalCanadarino. micheloni@ieee. orgluca.crippa @ieee.orgAlessia marelliIntegrated Device Technologyagrate brianzaItalylessiamarelli@gmail.comISBN97890-481-9430-8e-ISBN97890-481-9431-5DOI10.1007/978-90-481-9431-5Springer Dordrecht Heidelberg London New YorkLibrary of Congress Control Number: 2010931597O Springer Science+Business Media B.V. 2010No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or byany means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without writtenbeing entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose ofpermission from the Publisher, with the exception of any material supplied specifically for the purpoCover design: eStudio Calamar SLPrinted on acid-free paperSpringerispartofSpringerScience+businessMedia(www.springer.com)PrefaceIn the last decade Flash cards became the most important digital storage supportIt is difficult to identify a single killer application(digital photography, MP3digital video, ...)or whether the success of this media support is due to itsusability in different applications. It is also difficult to state whether the recentlution in the infotainment area has been triggered by the availability of high-performance NAND Flash memories or if the extraordinary success of Flash cardsis a consequence of the establishment of new applicationsIn any case, independently of the cause-effect relationship linking new digitalapplications and Flash cards, to realize how NANd Flash memories entered in ourdaily life, it is sufficient to imagine as they would change our recent habits if theNAND memories disappeared suddenly. To take a picture it would be necessary tofind a film (as well as a traditional camera .), disks or even magnetic tapes wouldbe used to record a video or to listen a song, and a cellular phone would return tobe a simple mean of communication rather than a console for an extendedentertainmentThe development of nand Flash memories will not be set down on the mereevolution of these digital systems since a new killer application can trigger a furthersuccess for this memory support: the replacement of Hard Disk Drives(HDD)with Solid State Drives (SSD)The advantages of Ssd with respect to HDD are countless(higher read/writspeed, higher mechanical reliability, random access, silent operation, lower powerconsumption, lower weight, .. ) Nevertheless, the cost per gigabyte is stillsignificantly favorable to hDd and the success of ssd will depend only on theperformances that they will succeed in reachingThe present book, the fourth authored by rino micheloni and coworkers afterVLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and ErrorCorrection Codes for Non-volatile Memories, all published by Springer, tacklesall the main aspects related to NANd Flash memories, from the physicaltechnological, and circuit issues to their use in Flash cards and SsdsAfter an extended market overview(Chap. 1), Chap 2 has been conceived as aguide for the entire book, so that the reader can directly reach the heart of theproblems that interest himThe following chapters deepen physical and technological aspects. In particularChaps. 3 and 4 tackle technological and reliability issues of traditional FloatingGate NAND memories, respectively, while the state-of-the-art of charge trappingtechnologies is effectively summarized in Chap 5Ⅴ i PrefaceThe central part of the book is dedicated to circuit issues: logic( Chap. 6),sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12)Other basic topics related to circuit aspects are also analyzed, such as theimplementation of Double Data Rate interfaces( Chap. 7), while multilevel storage(2 bits per cell) is presented in Chap. 10Techniques adopted to increase memory reliability and yield are discussedin Chaps. 13 and 14, the former dealing with redundancy, the latter with ErrorCorrection Codes. The test flux used by nand memories manufactures is describedin Chap 15Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allowreaching the lower cost per gigabyte and that will conquer, in the next few years,the market of consumer applicationsThe last chapters are dedicated to the two most popular systems based onNAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationshipbetween Nand memories and system performances are highlightedFinally, Chap. 19 describes the effects of ionizing radiations on non-volatilememories, to understand whether NaNd memories can be safely used in spaceand military applicationsProf. Piero olivoDean of the Engineering FacultyUniversity of ferrara, ItalyAcknowledgementsAfter completing a project like a technical book, it is very hard to acknowledgeall the people who have contributed directly or indirectly with their work anddedicationFirst of all, we wish to thank all the authors of the contributed chaptersWe have to thank mark de Jongh for giving us the possibility of publishing thiswork and cindy zitter for her continuous supportLast but not least, we keep in mind all our present and past colleagues for theirsuggestions and fruitful discussionsRino. Luca and alessiaTable of contentsPrefaceAcknowledgementsvIII Market and applications for nand Flash memoriesGregory Wong2 NAND overview: from memory to systemsR. Micheloni, A Marelli and S. Commodaro3 Program and erase of Nand memory arrays55Cristoph Friederich4 Reliability issues of NAND Flash memoriesC. Zambelli. a. Chimenton and p. olivo5 Charge trap nand technologies115Alessandro grossi6 Control logic131A Marelli.R Micheloni andR. ravasio7 NAND DDR interface161Andrea silvagni8 Sensing circuits197L. Crippa and R. micheloni9 Parasitic effects and verify circuits235L. Crippa and R. michelonO MLC Storage261L Crippa and R Micheloni11 Charge pumps, voltage regulators and HV switchesR Micheloni and L Crippa
- 2020-12-08下载
- 积分：1
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光孤子通信matlab仿真程序
这是光孤子通信的仿真程序，包括了一阶孤子、二阶孤子、高阶孤子的在不同情形下的仿真，如高阶色散、非线性效应、初始啁啾等，以及孤子间的相互作用及其抑制等。
- 2020-06-25下载
- 积分：1
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在matlab中实现二维卡尔曼滤波
在matlab中实现二维卡尔曼滤波，模型采用简单的恒速模型。
- 2020-12-10下载
- 积分：1
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单相全控整流电路simulink仿真
单相全控整流电路simulink仿真，适合7.1版本及以上，电力电子技术电路仿真
- 2020-12-09下载
- 积分：1
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遗传蚁群算法循环取货路径规划matlab gui程序
遗传蚁群算法循环取货路径规划matlab gui程序
- 2020-11-27下载
- 积分：1
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labview 实现变声功能
labview编写的可以实现变声功能，并能将其保存下来的程序。用2016版本写的
- 2020-11-27下载
- 积分：1
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抢答器用C#语言实现
这是一个在.NET环境中，用c#实现的抢答器。采用c#的remoting技术。有服务器端，多个客户端（假设最多3个），用winform实现界面。有声音提示。当然网上的资料给了我极大的帮助，现奉献给大家，仅供学习参考使用。关键字：抢答器用C#语言实现 抢答器 用软件实现抢答器 .net环境实现抢答器 用c#语言实现抢答器 remoting实现抢答器 winform实现抢答器 局域网抢答器 多客户端抢答器，靠，这么多的关键字看你还搜不到！！
- 2021-05-06下载
- 积分：1
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WinCC V7.2与S7 1200和1500通讯手册
WinCC V7.2与S7-1200/1500 PLC常规通讯，此文档主要讲述如何使用“SIMATIC S7-1200, S7-1500 Channel”通道，组态与S7-1200/1500的以太网通讯。1概述自 WinccⅥ7.2版本起,软件新増加了“ SIMATIC S7-1200,S7-1500 Channel”通道,用于 Wincc与S7-1200/S7-1500PLC之间的通信。此驱动只支持以太网通讯,使用TCP/IP协议。此文档上要讲述如何使用“ SIMATIC S7-1200,S7-1500 Channel”迸道,组态与S71200/1500的以太网通讯。在win℃C项目中可添加此驱动,如图1-1所示,打开变量管理界面,选择“变量管理”点击鼠标右键,选择“添加新的驱动程序”,在驱动列表中选择“ SIMATIC S7-1200,S7-1500 Channe1”驱动。文件编辑E)视图帮助什变量管理《变量管理数结构变导入Modbus TCPIPOPC5Profibus DP6Profibus FmsSIMATIC 505 TCPIP8SIMATIC S5 Ethernet Layer 410SIMATIC S5 Profibus FDL本本本符本符符符符本本11SIMATIC $5 Progr ammers Port AS51112SIMATIC S5 Serial 3964R1314SIMATIC ST-1200. S7-1500 Channel1516SIMATIC TI Serial点17Simotion18System Info19图1-1添加驱动文档示例的软硬件环境件: Wincc项目运行的电脑自带普通以太內卡、CPU1214C、CPU1511-1PN软件: WinCc7.2Upd6、 Simatic net v8.2SPl、Step7Ⅵ13(用于组态S71500/1200)2 Wincc v7.2与S7-1200PLC常规通讯2.1设置PLC通讯参数在Step?Ⅵ13组态软件中打开S7-1200项目,关丁PLC硬件组态步骤在此不详述。在树形菜单中打开“设备和內络”,打开网终视图点击CPU1214C通讯端口,在“属性”界面中设置通讯参数,在“子网”列表中可把接口连接到某一子网,设置“IP电址”和“子网掩码”参数。简单通讯情况下,可以不用启用IP路由尜,如图2-1所小。□项目157-1200鱼设备和网络PLC 1CPU 12140Pu1511-1PN571500AC/DC/RlyPLC设备组态旦在和诊断程序块「工艺对象细外部原文件PLc变里PLc数据类型圆出控与强制表约程序信息PROFINET接口1[X1:PN(LAN墨设备代理数据属性「信息S诊断文本列表常规0变量系统常数文本□本模块□吒C2[Uu15111刚太网地址以太网地址设备组态高级接口连接到旦在线和诊断时间同步程序块硬件标识符子网:PNE2工艺对象添加新子网外部原文件FLC变里PLc数据类型P协议监控与强制表UTra⊙在项目中设置P地址设备代理据P地址:[19216840120ˇ详细视图子阿镜吗:[255:2552550图2-1S7-1200通讯参数将组态下载到CPU,PLC组态完成2.2 Wincc软件组态步骤2.2.1电脑网卡参数设置在操作系统网络连接中设置此网卡的IP地址以及子网掩码,在此例中,IP地址和PIC的IP地址在同一样网段中,子网掩码一致,如图2-2所示。在PLC和电脑之间接入以太网通讯电缆,测试电脑与PC之间物理连接是否正常。选择操作系统左下角“开始”菜单,在最下一行运行栏中输入“CⅧ”命令,然后敲回车进入DOS命令界面。在界面中输入pins命令,格式:pingping192.168.48,120在Ping192.16841.128具有32字节的数据:自192168,48,128的节=32时间< ms TTL=128自192168.4.128的节=32时间
- 2020-12-11下载
- 积分：1
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牛顿迭代法matlab程序
几道例题，用牛顿迭代法解的三道关于非线性方程组的题目，文件中有matlab代码，仅供参考
- 2020-11-30下载
- 积分：1
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