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STM32F107VCT6官方原理图和PCB.rar
【实例简介】STM32F107VCT6官方原理图和PCB
STM32F107VCT6官方原理图和PCB
资源来源网络，如有侵权请通知删除。
- 2021-11-20 00:31:49下载
- 积分：1
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MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
- 2020-12-10下载
- 积分：1
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手写数字字母数据集[0-9,a-z,A-Z]
预处理过的EnglishHnd手写数字字母数据集，文件名以改成数字、字母（限于windows10下不区分大小写，大写字母的都是双字母，如AA，BB），尺寸被裁剪缩放到28*28，与minist数据集完美兼容。
- 2020-11-06下载
- 积分：1
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u-boot移植手册和uboot代码详细分析和UBoot移植详解
u-boot移植手册和uboot代码详细分析和UBoot移植详解，UBOOT移植详细_很全面
- 2021-05-06下载
- 积分：1
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播放rtsp,rtmp视频流安卓代码
【实例简介】本项目集成了1、ffmpeg：解析rtsp、rtmp视频流，解码后转换得到YUV格式图片数据；2、SDL2：将YUV格式图片显示在安卓手机上。
- 2021-11-06 00:34:24下载
- 积分：1
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三相全控PWM整流器matlab（带仿真程序）
此资源为三相电源输入，经过全桥整流得到直流电压，器控制策略采用了PI控制，其参数见附件
- 2020-11-28下载
- 积分：1
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usbser.sys
将压缩包解压后整个文件里内容拷贝如何压缩包相似的文件夹中，后面的那一串字母和数字每个电脑不同。
- 2020-12-01下载
- 积分：1
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基于Adaboost算法的人脸识别 北京大学赵楠
人脸检测和人脸识别都是属于典型的机器学习的方法，但是他们使用的方法却相差很大。对于人脸检测而言，目前最有效的方法仍然是基于Adaboost的方法。在网上可以找到很多关于Adaboost方法的资料，但基本上是千篇一律，没有任何新意。给初学者带了很多不便。建议初学者只需要认真阅读：北京大学 赵楠 的本科毕业论文 ：基于 AdaBoost算法的人脸检测 这篇毕业论文就够了。作者详细分析了Adaboost算法在人脸检测中的具体执行过程，尤其是关于弱分类器的Haar特征选取过程，描述的相当清晰。北京大学太科生业论文最后一章,用编写的实现了 Adaboost算法的FDt程序,给出了相应的人脸检测实验结果,并和 Viola等人的结果做了比较关键词 Keywords∧ adaboost方法、人脸检测、 Boosting方法、PCA学习模型、弱学习工工TI北京大学太科生业论文谨以此论文献给A腺嘌呤、T胸腺嘧啶、G鸟嘌呤、C胞嘧啶、1和0-智能的基本构件和开拓智能研究的伟大先驱者们This dissertation is dedicated toA, T, G, C, 1 and o, the building blocks ofintelligence.andto the pioneers uncovering the foundations ofintelligence.北京大学太科生业论文正文目录 Contents摘要 ABSTRaCTI正文目录 CONTENTS图录LISTOFFIGURES…I表目录LISTOF TABLES····················a···········ba·。·········。··。······VIII人脸检··11概12难点与展望213人脸检测方法的性能评测1.31人脸图像数据库………41.3.2性能评测.2检测方法分类…2,1基于知识的方法●●●●●·●··●●●●●D·●b●鲁●·●●●。●。D●●·●●·●·。D。●。·。。●●●D·●看●。·●。·D●看●看。●。●8北京大学本科生毕业论文22特征不变量方法3模板匹配方法●香●鲁●鲁·●D·。●·。●·鲁●●鲁·●鲁鲁●●●鲁●·鲁··。●·●鲁音·●鲁。●···。·●●●鲁自●·鲁鲁。●●●b·●鲁自非b●●。●10基于表象的方法113经典方法概述···············.s.····················································121神经网络NEURALNETWORK232特征脸EIGENFACE1333基于样本学习方法 EXAMPLE-BASEDMETHODS34支持向量机 SUPPORTⅴ ECTOR MACHINE(SVM)........1535隐马尔科夫模型 HIDDEN MARKOV MODEL(HMM)4 ADABOOST方法概述164.1引2 PAC学模164.21概述14.22数学描述音音音。音音…………………………17V工北京大学太科生业论文43弱学习强学1844BOOSTING方法5矩形特征与积分图a···············4·················4··4········‘·4······4··4······2051引言··········.·········································.···········252矩形特征 RECTANGLE FEATURE2521概述.205.22特征模版.21检器内特征总数2252.31子窗口内的条件矩形5232条件矩形的数量…52.33子窗口的特征矩形数量.2352.34结果2453积分图 INTEGRAL IMAGE25531概念含………………25532利用积分图计算矩形特征值.27V工I北京大学太科生业论文5.32.1图像区域的积分图计算.5322矩形特征的特征值计算86 ADABOOST训练算法●●●D··●·●···●●。·●·。·●●鲁·●··。·●。·●鲁。●自·鲁。●。●●b·。·●。●鲁306.1训练基本算法·●。●。·●··●●·●。鲁鲁●●b·●鲁●··●·●。。●看●。鲁●·●●香···曲鲁鲁●鲁●306.1.1基本算法描述306.12基本算法流程图3262弱分类器 WEAK CLASSIFER33621特征值f(x)62阈值q、方向指示符p38623弱分类器的训练及选取…...83强分类STRONGCLASSIFIER40631构成40632错误率上限407程序实现及结果.………4371样本集●●·●·····●···········●··············●·······●··●·●·····●··········●··········●··●··●4372练难点及优化44721计算成本14V工工T北京大学本科生毕业论文7.2.2减少矩形特征的数量……省着音自··。·非。。音音。非D音音普申普普普非非非非着44723样本预处理4573检测结果467.31检测器……46732实验结果..477321实验对比477.322更多实验结果49733结论53致谢 ACKNOWLEDGMENTS54参考文献REFERENCES54Ver o76图目录 List of Figures人脸析流程2图2人脸的遮挡、不同表情、图像的质量、旋转等等都会影响人脸检测.3图3典型的正面人脸图像数据库中的人脸图像.图4左侧为测试图像,右侧为检测结果。不同的标准会导致不同的检测结果。北京大学本科生毕业论文图5基于知识的人脸检测方法抽象出人脸的基本特征规则图6—种人脸检测模板:这个模板由16个区域(图中灰色部分)和23种区域关系(用箭头表示)组成.10图7 ROWLEY的带有图像预处理的神经网络系统…13图8人脸高斯簇和非人脸高斯簇14图9矩形特征在人脸上的特征匹配。上行是24×24子窗口内选出的矩形特征,下行是子窗口检测到的与矩形特征的匹21图10计算mXm检测器内所有可能的矩形的数量。22图11积分图与积分的类比25图12坐标A(x,y)的积分图定义为其左上角矩形所有像素之和(图中阴影部分)。s(x,y)为A(x,y)及其y方向向上所有像素之和(图中粗黑竖线)26图13区域D的像素和可以用积分图计算为:i+i-(i2+i)图14矩形特征的特征值计算,只与此特征端点的积分图有关…...9
- 2020-11-28下载
- 积分：1
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单相PWM整流器仿真
单相PWM整流器仿真，仿真环境Matlab2014a，电压外环，电流内环，交流侧单位功率因数，直流电压稳定。
- 2020-12-06下载
- 积分：1
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最优控制理论与应用
【实例简介】本书是工科院校自动控制类各研究方向的硕士研究生和高年级本科生的“最优控制”课程教材。基本内容有：变分法、连续系统最优控制、线性连续系统的二次型调节器(LQR)、离散系统最优控制、最大值原理、动态规划。为配合上述六个基本内容，列举了两个应用实例，即LQR在电力系统中的应用、最小值原理在登月软着陆中的应用。本书内容适合于40学时的教学。
此外，本书还安排有最优控制的数值计算方法和奇异控制的内容，使读者对“最优控制”有完整的了解。
本书用MATLAB完成数值计算，并使用MATLAB的Symbolic Math工具箱（特别是用符号数学工具箱求取TPBVP的解析解）、Control System工具箱和Simulink（特别是用它对Bang-Bang控制完成仿真）等。
本书注重阐述思想和概念，演算明晰，力求流畅，以利阅读；部分章后附有课外阅读的参考文献、习题和上机安排。所以，本书不仅是硕士研究生和高年级本科生的教材，也可以作为自动控制技术人员的进修读物。
- 2021-11-08 00:33:19下载
- 积分：1
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